Yangtze Memory Technologies Co., Ltd.

Shasha Liu

Li Hong Xiao

ZongLiang Huo

Jing Gao

Enbo Wang

Qianbing Xu

Qianbin Xu

Feng Lu

Xiaoming Mao

Lihong Xiao

A semiconductor device includes a first stack of alternating first word line layers and first insulating layers over a semiconductor layer. A first channel structure extends from the semiconductor layer and through a first array region of the first stack. A second stack of alternating second word line layers and second insulating layers are over the first stack. A second channel structure extends from the first channel structure and through a second array region of the second stack. A thickness of a particular first insulating layer, which is positioned closest to the second stack relative to other first insulating layers, is a sum of at least two times an average thickness of the other first insulating layers and at least one time an average thickness of the first word line layers in the first array region.

Three-dimensional NAND memory device and method of forming the same

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack including interleaved conductive layers and dielectric layers, a channel structure extending vertically through the memory stack, and a semiconductor layer above the memory stack. The channel structure includes a channel plug in a lower portion of the channel structure, a memory film along a sidewall of the channel structure, and a semiconductor channel over the memory film and in contact with the channel plug. The semiconductor layer includes a semiconductor plug above and in contact with the semiconductor channel.

Three-dimensional memory device having semiconductor plug formed using backside substrate thinning

Growing community of inventors

Wuhan, China

Shasha Liu