Xiamen Sanan Optoelectronics Technology Co., Ltd.

Tianjin Sanan Optoelectronics Co., Ltd.

Shasha Chen

Duxiang Wang

Dongyan Zhang

Xiaofeng Liu

Yu-Ren Peng

Liangjun Wang

Shao-Hua Huang

Kaiqing Xu

Kunte Lin

Yenchin Wang

Zhibin Liu

Jinghua Chen

Chong Xu

Shihchieh Hou

A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.

Light-emitting device

A light emitting diode has a light emitting region including a multiple quantum well structure, including a first protection layer, a first intermediate layer over the first protection layer, a quantum barrier layer over the first intermediate layer, a second intermediate layer over the well layer, a second protection layer over the second intermediate layer, and a quantum barrier layer over the second protection layer.

Multiple quantum well structure and light emitting diodes

A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.

Nitride light-emitting diode

Growing community of inventors

Tianjin, China

Shasha Chen