P.c.t. Systems, Inc.

Sharyl L Maraviov

Henry R Miranda

Ahmed Busnaina

Garry L Montierth

A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Method and apparatus to process substrates with megasonic energy

A bath system for processing semiconductor wafers with an efficient and uniform delivery of sonic energy to the semiconductor wafers. The bath system includes a container (e.g., a quartz container) configured for receiving at least one semiconductor wafer (e.g., a 300 mm diameter semiconductor wafer) and holding processing liquid. The container has two vertical sidewalls and two angled walls, with each of the two angled walls being disposed below one of the vertical sidewalls. The bath system also includes at least one sonic transducer attached to each of the two angled walls. These sonic transducers are arranged so that sonic energy emanating therefrom is directed across the at least one semiconductor wafer during processing. The system further includes at least one sonic transducer attached to each of the vertical sidewalls. The sonic transducers attached to each of the vertical sidewalls are also arranged so that sonic energy therefrom is directed across the at least one semiconductor wafer during processing.

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Pleasanton, CA, United States of America

Sharyl L Maraviov