Western Digital Technologies, Inc.

Tokyo Institute of Technology

Sharon Swee Ling Banh

Quang Le

Cherngye Hwang

Hisashi Takano

Brian Rodrick York

Xiaoyong Liu

Nam Hai Pham

Son T Le

Maki Maeda

Hassan Osman

Fan Tuo

Yu Tao

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and/or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, TaW(110), TaW(100), TaWN, TaWN, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, TaWN, TaWN, TaW (110), TaW(100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

Highly textured buffer layer to grow YBiPt (110) for spintronic applications

The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials

Growing community of inventors

San Jose, CA, United States of America

Sharon Swee Ling Banh