Technion Research & Development Foundation Limited

Sharon Bar-Lev Shefi

Yael Nemirovsky

Igor Brouk

Amos Fenigstein

Tomer Leitner

Vitali Savuskan

Gil Visokolov

There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.

Differential mode detection circuit

A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.

Device having an avalanche photo diode and a method for sensing photons

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Nofit, Israel

Sharon Bar-Lev Shefi