Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Shardul Patel

Frank Sinclair

Victor M Benveniste

Bon-Woong Koo

Graham Wright

Timothy J Miller

Robert J Mitchell

Wilhelm P Platow

D Jeffrey Lischer

Robert H Bettencourt

Robert J Mason

Svetlana Radovanov

Peter F Kurunczi

Costel Biloiu

Craig Richard Chaney

Kenneth Harry Purser

Jay Thomas Scheuer

Roger Bradford Fish

Robert C Lindberg

James S Buff

George Gammel

Eric R Cobb

Eric D Wilson

Steven C Borichevsky

Oliver V Naumovski

Mayur Jagtap

John (Bon-Woong) Koo

Tyler Wills

Charles A Teodorczyk

Xiangdong He

Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a second beam current of the ion beam at the second Faraday cup, and determining an optimal scan distance of the ion beam across the intended beam-scan area based on the first beam current and the second beam current.

Systems and methods for optimizing full horizontal scanned beam distance

An ion source that is capable of different modes of operation is disclosed. A vaporizer is in communication with the ion source. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as an inert gas, while heating the vaporizer. When operating in a second mode, the ion source may supply a second gas, which may be an organoaluminium gas. When operating in a third mode, the ion source may supply the second gas, while heating the vaporizer. Ions having single charges may be created in the first and second modes, while ions having multiple charges may be created in the third mode.

Ion source having different modes of operation

An ion source that is capable of different modes of operation is disclosed. The ion source includes an insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder may a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. A solid target is also disposed in the arc chamber. When the insertable target holder is used, multicharged ions are created. When the insertable target holder is retracted, single charged ions are created by only etching the solid dopant-containing compound.

Hybrid ion source for aluminum ion generation using a target holder and a solid target

An ion source that is capable of different modes of operation is disclosed. A solid target may be disposed in the arc chamber. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may supply an organoaluminium gas. Ions having single charges may be created in the first mode, while ions having multiple charges may be created in the second mode. In some embodiments, the solid target may be retractable.

Hybrid ion source for aluminum ion generation using organoaluminium compounds and a solid target

Embodiments of the present disclosure relate to a rotatable electrostatic chuck. In some embodiments, a rotatable electrostatic chuck includes a dielectric disk having at least one chucking electrode and a plurality of coolant channels; a cryogenic manifold coupled to the dielectric disk and having a coolant inlet and a coolant outlet both of which are fluidly coupled to the plurality of coolant channels; a shaft assembly coupled to the cryogenic manifold; a cryogenic supply chamber coupled to the shaft assembly; a supply tube coupled to the cryogenic supply chamber and to the coolant inlet to supply the cryogenic medium to the plurality of coolant channels, wherein the supply tube extends through the central opening of the shaft assembly; and a return tube coupled to the coolant outlet and to the cryogenic supply chamber, wherein the supply tube is disposed within the return tube.

Cryogenically cooled rotatable electrostatic chuck

A rotary union that includes a heated ferrofluid seal is disclosed. The rotary union includes an inner rotating shaft, an intermediate rotating shaft and an outer rotating shaft. The inner rotating shaft is hollow to allow the flow of cryogenic fluid in one direction. The inner rotating shaft and the intermediate shaft are spaced apart to create a channel for the return of the cryogenic fluid. The intermediate rotating shaft is separated from the outer rotating shaft by a gap so as to reduce thermal conductivity. In this way, the temperature of the outer rotating shaft is greater than the temperature of the cryogenic fluid. A heated ferrofluid seal is disposed between the outer rotating shaft and the housing.

Cryogenic ferrofluid sealed rotary union

An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

SiC coating in an ion implanter

A composite electrostatic rod may include a body comprising a length L and cross sectional area A. The body may include an outer portion comprising a first material, and a core comprising a second material different than the first material and surrounded by the outer portion, wherein a natural frequency of the composite electrostatic rod is greater than that of a graphite rod having the length L and cross sectional area A.

Hybrid electrostatic lens with increased natural frequency

Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Techniques for improving extracted ion beam quality using high-transparency electrodes

An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.

Apparatus for controlling the temperature of an RF ion source window

An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.

Temperature controlled ion source

An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.

An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.

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North Reading, MA, United States of America

Shardul Patel