Globalfoundries Singapore Pte. Ltd.

Vanguard International Semiconductor Singapore Pte. Ltd.

Sharath Poikayil Satheesh

Rakesh Kumar

Anthony K Stamper

Jeffrey C Maling

You Qian

Pradeep Yelehanka

Humberto Campanella Pineda

Siddharth Chakravarty

Natarajan Rajasekaran

Chun Hoe Yik

A method for forming a lamb acoustic wave resonator and filter and the resulting device are provided. Embodiments include forming a sacrificial layer over a substrate; forming a first electrode over the sacrificial layer; forming a piezoelectric thin film over the first electrode; forming a second electrode over the piezoelectric thin film; forming a hardmask over the second electrode; etching through the hardmask and the second electrode down to the piezoelectric thin film forming self-aligned vias; forming and patterning a photoresist layer over the self-aligned vias; etching through the photoresist layer forming cavities extending through the vias and to the sacrificial layer; and removing the sacrificial layer forming a cavity gap under the cavities and first metal electrode.

Lamb acoustic wave resonator and filter with self-aligned cavity via

A microelectromechanical system (MEMS) device is disclosed. The MEMS device includes a device substrate with a top device surface and a bottom device surface having a MEMS component in a device region. A top device bond ring is disposed on the top device surface surrounding the device region and a bottom device bond ring is disposed on the bottom device surface surrounding the device region. A top cap with a top cap bond ring is bonded to the top device bond ring by a top eutectic bond and a bottom cap with a bottom cap bond ring is bonded to the bottom device bond ring by a bottom eutectic bond. The eutectic bonds encapsulate the MEMS device.

Wafer level packaging for MEMS device

An integrated monolithic device with a micro-electromechanical system (MEMS) and an integrated circuit (IC) and a method of forming thereof is disclosed. The monolithic device includes a substrate with IC components and a MEMS formed over the IC. A back-end-of-line (BEOL) dielectric having IC interconnect pads in a pad level is formed over the substrate. A MEMS is formed over the BEOL dielectric with the IC interconnect pads. The MEMS includes a MEMS stack having an active MEMS layer and patterned top and bottom MEMS electrodes formed on the top and bottom surfaces of the active MEMS layer. IC MEMS contact vias are formed at least partially through the active MEMS layer. IC MEMS contacts are formed in the IC MEMS contact vias in the active MEMS layer and configured to couple to the IC interconnect pads.

Monolithic integration of MEMS and IC devices

Methods for fabricating semiconductor or micromachined devices with metal structures and methods for forming self-aligned deep cavity metal structures are provided. A method for fabricating a device with a metal structure includes patterning a mask with an opening perimeter bounding an opening over a substrate. The method includes performing an isotropic etch to etch a shallow portion of the substrate exposed by the opening and a shallow portion of the substrate underlying the opening perimeter of the mask. The method also includes performing an anisotropic etch to etch a deep portion of the substrate exposed by the mask opening and a deep portion of the substrate underlying the opening perimeter of the mask to form a cavity having a bottom surface. Further, the method includes depositing metal over the mask, into the mask opening and onto the bottom surface, wherein the metal on the bottom surface forms the metal structure.

Methods for fabricating semiconductor or micromachined devices with metal structures and methods for forming self-aligned deep cavity metal structures

Growing community of inventors

Singapore, Singapore

Sharath Poikayil Satheesh