Nxp Usa, Inc.

Sharan Kishore

Lakshminarayan Viswanathan

Lu Li

Freek Egbert Van Straten

Jaynal Abedin Molla

David James Dougherty

Tianwei Sun

Fui Yee Lim

A substrate is bonded to a conductive metallic flange via a free-standing heterostructure thermal interface material that includes physically distinct volumes of different conductive materials. The heterostructure thermal interface material (a bimetallic foil, for example) is metallurgically bonded to the bottom of the substrate on one side and metallurgically bonded to the flange on an opposite side. The constituent materials forming the thermal interface material and their dimensions can be chosen to achieve a desired thermal and/or electrical conductivity while allowing the coefficient of thermal expansion (CTE) to be matched to the substrate and/or the flange.

Low-stress thermal interface

A thermal interface structure for transferring heat from an electronic component to a system heat sink includes a stack of one or more layers of a stiff thermal interface material and one or more layers of a compliant thermal interface material stacked on and connected to the one or more layers of the compliant thermal interface material. In some embodiments, the thermal interface structure also may include one or more layers of a shape memory alloy and/or a collapsible encasement.

Thermal interface structures, electrical systems with thermal interface structures, and methods of manufacture thereof

Power amplifier (PA) packages containing peripherally-encapsulated dies are provided, as are methods for fabricating such PA packages. In embodiments, a method for fabricating a PA package includes obtaining a die-substrate assembly containing a radio frequency (RF) power die, a package substrate, and a die bond layer. The die bond layer is composed of at least one metallic constituent and electrically couples a backside of the RF power die to the package substrate. A peripheral encapsulant body is formed around the RF power die and covers at least a portion of the die bond layer, while leaving at least a majority of a frontside of the RF power die uncovered. Before or after forming the peripheral encapsulant body, terminals of the PA package are interconnected with the RF power die; and a cover piece is bonded to the die-substrate assembly to enclose a gas-containing cavity within the PA package.

Power amplifier packages containing peripherally-encapsulated dies and methods for the fabrication thereof

Growing community of inventors

Tempe, AZ, United States of America

Sharan Kishore