Morton International, Inc.

Microcoating Technologies, Inc.

Ut-battelle, Inc.

Lockheed Martin Energy Research Corporation

Ngimat Co.

Shara S Shoup

Andrew Tye Hunt

Wen-Yi Lin

Richard W Carpenter

Tzyy Jiuan Hwang

Michelle Hendrick

Amit Goyal

Donald M Kroeger

David B Beach

Stephen E Bottomley

Mariappan Paranthamam

Helmut G Hornis

Girish N Deshpande

Miodrag Oljaca

Tzyy-Jiuan Jan Hwang

Subramaniam Shanmugham

Hong Shao

Trifon Tomov

Henry A Luten, Iii

Aimee Poda

William J Dalzell, Jr

Nii Sowa Laye

Joe Thomas

John Eric McEntyre

Jan Tzyy-Jiuan Hwang

Flame produced vapors for combustion chemical vapor deposition are redirected from the direction of the flame by differential atmospheric pressure, such as positive pressure provided by a blower or negative pressure provided by a vacuum. This allows, for example, lower surface temperatures of substrates being coated with flame-produced vapors and coating of interior surfaces.

Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods

A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

Formation of thin film resistors

In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.

Resistors for electronic packaging

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Buffer layers on biaxially textured metal substrates

Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.

Deposition of resistor materials directly on insulating substrates

Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive materials may be a conductive oxide.

Precursor solution compositions for electronic devices using CCVD

Sol-gel deposition of buffer layers on biaxially textured metal

Growing community of inventors

Woodstock, GA, United States of America

Shara S Shoup