Beijing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Shaoying Xu

Zhenyu Xie

Xu Chen

Tiansheng Li

Changjiang Yan

Xuecheng Hou

Xiaohui Jiang

Lei Chen

Jing Li

Chunping Long

Jian Nan Guo

Zongmin Tian

Haizheng Xie

Tainsheng Li

The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.

Thin film transistor and manufacturing method thereof, array substrate, and display device

An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.

Etching time detection means and method for etching device

The invention disclose an electrochomism display device and a method of fabricating the same, relates to the field of display technology, and the electrochomism display device may effectively suppress the light-leakage phenomenon in the opening region between adjacent electrochomism pixels, thus the display effect of the electrochomism display device is improved. The electrochomism display device comprises a plurality of eletrochromism pixels, each of the eletrochromism pixels comprises a first conductive layer, an eletrochromism layer, and a second conductive layer sequentially formed on a transparent substrate, an opening region is provided between every two adjacent eletrochromism pixels, wherein a thin film transistor is provided in the opening region, and a gate, a source and a drain of the thin film transistor are made of opaque material.

Electrochromism display device and method for fabricating the same

A touch device and a manufacturing method thereof. The touch device comprises: a pixel unit, the pixel unit being provided therein with an electrochromic layer, a pixel electrode and a thin film transistor acting as a switch for the pixel electrode, the pixel electrode being connected with the electrochromic layer; and a touch unit comprising a touch driving electrode and a touch sensing electrode disposed crossing each other and insulated from each other, for acquiring a touch position; the thin film transistor is configured to control the pixel electrode to operate according to the acquired touch position to apply a driving signal to the electrochromic layer connected with the pixel electrode.

Touch device and manufacturing method thereof

An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.

LCD display with light sensor having a light blocking layer

An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H, Ar and O. By depositing a channel layer in a first mixed gas containing H, Ar and O, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.

Oxide TFT, preparation method thereof, array substrate, and display device

An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel X-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate scan line is formed, forming a data line, a TFT switch element and a photosensitive element through one patterning process, wherein on the mask plate used in the patterning process, a region corresponding to a channel of the TFT switch element is semi-transmissive, whereas regions respectively corresponding to the data line, the photosensitive element and the portion of the TFT switch element other than the channel thereof are non-transmissive; thereafter, on the substrate formed with the TFT switch element and the photosensitive element, a passivation layer and a bias line are formed.

Manufacturing method of an amorphous-silicon flat-panel X-ray sensor

Embodiments of the invention disclose an array substrate and a manufacturing method thereof and a liquid crystal display. In the array substrate, an additional electrode is formed above a gate line, the additional electrode and the gate line are spaced from each other by a gate insulation layer, and the additional electrode is connected electrically with the common electrode line; pixel electrode extends to over the additional electrode and is overlapped with the additional electrode, the overlapped portion of the pixel electrode and both the additional electrode and the common electrode line forms a storage capacitor. The liquid crystal display according to the embodiment of the invention comprises the above array substrate.

Array substrate with additional electrode formed above gate line, manufacturing method thereof and liquid crystal display

An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.

Amorphous silicon photoelectric device and fabricating method thereof

A method of manufacturing a thin film transistor flat sensor that includes depositing a first metal film on a substrate and forming a common electrode on the substrate with one patterning process; successively depositing an insulating film and a second metal film on the substrate having the common electrode formed thereon, and forming a gate electrode by applying one pattering process to the second metal film; applying one patterning process to the deposited insulating film to form a common electrode insulating layer, wherein a first via hole is formed in the common electrode insulating layer at a location corresponding to the common electrode; depositing a transparent conductive film on the substrate having the common electrode, and forming a first conductive film layer, acting as one polar plate of a storage capacitor, on the common electrode and the gate electrode with one patterning process.

TFT flat sensor and manufacturing method therefor

A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein: the TFT device is a top gate TFT; the photodiode sensing device includes: a bias electrode and a bias electrode pin connected with the bias electrode, both of which are disposed on the base substrate; a photodiode disposed on the bias electrode and a transparent electrode disposed on the photodiode and connected with the source electrode.

Sensor including TFT device and photodiode sensing device and method for fabricating the same

Embodiments of the disclosure provide a signal line fabrication method, an array substrate fabrication method, an array substrate and a display device. The signal line fabrication method includes: sequentially forming a material layer for forming the signal line, a material layer for forming a first barrier layer and a material layer for forming a second barrier layer; forming the first barrier layer and the second barrier layer by a patterning process; and forming the signal line by a patterning process.

Signal line fabrication method, array substrate fabrication method, array substrate and display device

Embodiments of the invention disclose a sensor and its fabrication method, the sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a bottom gate TFT; the photodiode sensing device comprises: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line.

Method for fabricating sensor using multiple patterning processes

A sensor and its fabrication method are provided, wherein the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a top gate TFT. The photodiode sensing device includes: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line. In comparison with the conventional technology, the method for fabricating the sensor of the invention reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect free rate.

Sensor and method for fabricating the same

A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element including a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes are positioned between the active layer and the gate electrode. The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

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Beijing, China

Shaoying Xu