Globalfoundries Inc.

Shaowen Gao

Norman Chen

Randy W Mann

Sonia Ghosh

Hongxin Zhang

Feng Wang

A method disclosed herein includes: converting an image of a manufactured circuit to a plurality of representative contours, the plurality of representative contours corresponding to printed features in the manufactured circuit; generating a risk inventory for the manufactured circuit based on the plurality of representative contours, the risk inventory being configured to identify at least one process sensitive geometry (PSG) in the manufactured circuit; generating a common process window (CPW) for the manufactured circuit based on the plurality of representative contours and the risk inventory, the CPW being indicative of manufacturing reliability of each feature in the manufactured circuit; and generating instructions to adjust a manufacturing tool for creating the manufactured circuit, based on the generated CPW.

Generating risk inventory and common process window for adjustment of manufacturing tool

A method of creating an optical proximity correction (OPC) model and assessing the model through optical rule checking (ORC) includes the introduction of post-integration, i.e., post-metallization data. High density critical dimension scanning electron microscopy and backscattered electron scanning electron microscopy from a metallized structure are used during development and verification of the model to accurately predict post-integration behavior.

Methodology for post-integration awareness in optical proximity correction

Methods for forming a semiconductor layer, such as a metal1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.

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Clifton Park, NY, United States of America

Shaowen Gao