Hangzhou Silan Microelectronics Co., Ltd.

Hangzhou Silan Integrated Circuit Co., Ltd.

Shaohua Zhang

Yongxiang Wen

Yanghui Sun

Guoqiang Yu

Yulei Jiang

Dong Wang

Jianxing Wu

Yang Gao

Xianming Tang

Feng Yao

Hua Zhan

Xianwei Yan

Haifeng Lin

Disclosed are a bidirectional power device and a method for manufacturing the same. The bidirectional power device includes a semiconductor layer, a plurality of trenches located in the semiconductor layer, a gate dielectric layer located on an inner wall of each of the plurality of trenches, a control gate located at a lower portion of each of the plurality of trenches, a shield gate located at an upper portion of each of the plurality of trenches and an isolation layer located between the control gate and the shield gate. When the bidirectional power device is turned off, charges of a source region and a drain region are depleted by the shield gate through a shield dielectric layer, thereby improving voltage withstand property. When the bidirectional power device is turned on, the source region and/or the drain region and the semiconductor layer provide a low-impedance conduction path.

Bidirectional power device and method for manufacturing the same

A method for manufacturing a power device is disclosed. The method for manufacturing the power device comprises: forming a first doped region on the semiconductor substrate; forming a plurality of second doped regions in a first region of the first doped region; and forming a plurality of third doped regions in a second region of the first doped region. A first charge compensation structure is formed by the first doped region and the plurality of second doped regions, the first charge compensation structure and the semiconductor substrate are located on current channel. A second charge compensation structure is formed by the first doped region and the plurality of third doped regions, the second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device manufactured by the method not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.

Method for manufacturing power device

A power device is disclosed. The power device comprises: a semiconductor substrate; a first doped region on the semiconductor substrate; a plurality of second doped regions located in a first region of the first doped region; a plurality of third doped regions located in a second region of the first doped region. The plurality of second doped regions are separated with each other at a first predetermined spacing. A first charge compensation structure is formed by the plurality of second doped regions and the first doped region, and the first charge compensation structure and the semiconductor substrate are located on a current channel. The plurality of third doped regions are separated with each other at a second predetermined spacing. A second charge compensation structure is formed by the plurality of third doped regions and the first doped region. The second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.

Power device

The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process. Further, with a minimum thickness of the field oxide layer, the parasitical threshold voltage between the aluminum wiring and the silicon surface of the high-voltage device can be higher than 1200V, thereby improving the planarization of oxide layer steps on the silicon surface in the whole high-voltage BCD process, and enhancing the reliability of the product.

Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process

The present invention provides a switching power supply and a controller thereof, wherein the controller comprises: a switching power supply control device having a power supply terminal and detecting a voltage at the power supply terminal; a composite device integrating therein a power transistor and a depletion transistor, wherein the power transistor has a gate coupled to a first input, a source coupled to a first output, and a drain coupled to an input signal terminal; the depletion transistor has a gate coupled to a second input, a source coupled to a second output, and a drain coupled to the input signal terminal; the first input, the second input and the second output are coupled to the switching power supply control device, the first input receives a driving signal generated by the switching power supply control device, and the input signal terminal receives an input signal of the switching power supply. The power transistor and the depletion transistor in the composite device may be integrated within the same composite device. The present invention can shorten the startup time of the switching power supply, effectively reduce the standby power consumption, and also reduce the cost.

Switching power supply and the controller thereof

This invention provides a composite device and a switching power supply. The composite device integrates therein a first enhancement-mode MOS device and a depletion-mode MOS device, and comprises: an epitaxial region of a first doping type; a first well region and a second well region formed in parallel on the front side of the epitaxial region; a first doped region of the first doping type formed within the first well region; a gate of the first enhancement-mode MOS device; a second doped region of the first doping type formed within the second well region; a channel region of the first doping type, wherein the channel region extends from a boundary of the second well region to a boundary of the second doped region; and a gate of the depletion-mode MOS device. The switching power supply includes the composite device above. This invention can decrease the process complexity, reduce the chip area and cost, and may be applicable to high power scenarios.

Growing community of inventors

Hangzhou, China

Shaohua Zhang