Beihang University

Beijing Bytedance Network Technology Co., Ltd.

Shaohua Yan

Yali Zhang

Weisheng Zhao

Yin Shi

Kaihua Cao

Wenlong Cai

Xiangxiang Chen

Erya Deng

Pu Cheng

A highly reliable STT-MRAM structure and an implementation method thereof are provided. The STT-MRAM structure includes: a memory block array, including a plurality of memory blocks; on-chip in-situ temperature sensors, for detecting an instantaneous temperature of each memory block; and a controller, which outputs a reading or writing operation signal based on the instantaneous temperature of each memory block detected by the on-chip in-situ temperature sensors, so as to modulate respective voltages and/or frequencies of reading and writing operations of each memory block. When the instantaneous temperature is too high, the voltages and/or frequencies of the reading and writing operations would be decreased, to the contrary when the instantaneous temperature is too low, the voltages and/or frequencies of the reading and writing operations would be increased, which expands a reliable working temperature range and lengthens a lifetime of the STT-MRAM structure.

Highly reliable STT-MRAM structure and implementation method thereof

Growing community of inventors

Beijing, China

Shaohua Yan