Southeast University

Csmc Technologies Fab2 Co., Ltd.

Shaohong Li

Longxing Shi

Weifeng Sun

Sen Zhang

Jing Zhu

Nailong He

Guichuang Zhu

A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region () having a first conductivity type; a first body region () disposed on the drift region () and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region () disposed in the first body region (); a second body region () disposed in the first conductivity type region () and having the second conductivity type; a source region () disposed in the second body region () and having the first conductivity type; and a contact region () disposed in the first body region () and having the second conductivity type.

Laterally double-diffused metal oxide semiconductor device

Growing community of inventors

Jiangsu, China

Shaohong Li