Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Semiconductor Manufacturing International Corp.

Smic Advanced Technology Research & Development (shanghai) Corp.

Imec International

Shaofeng Yu

Jianhua Ju

Yang Liu

Hanming Wu

YongMeng Lee

Deyuan Xiao

Shuai Zhang

Wenbo Wang

Yunchu Yu

Yihua Shen

Weihai Bu

Jian Pan

Hai Zhao

Zhaoxu Shen

Fenghua Fu

Gang Mao

ShiuhWuu Lee

Cheng-Jui Yang

MengFeng Cai

A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a semiconductor structure comprising a substrate, at least one source region on the substrate, an interlayer dielectric layer covering a portion of the source region and having a cavity on the source region, and a pseudo gate insulation layer at the bottom of the cavity covering a portion of the source region; forming a barrier layer in the cavity; forming a loss reduction region in the interlayer dielectric layer by conducting an ion implantation process comprising silicon ion or carbon ion; removing the barrier layer; removing the pseudo gate insulation layer to expose a portion of the source region; and forming a gate structure on the exposed portion of the source region. This inventive concept reduces the loss of the interlayer dielectric layer, thus reduces the height loss of the gate electrode.

Semiconductor device manufacturing method with reduced gate electrode height loss and related devices

The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes a substrate; two fins located on the substrate and extending along a first direction; an isolation material layer surrounding the fins, comprising a first isolation regions located at an end region between the two fins along the first direction, and a second isolation region located at sides of the fins along a second direction that is different from the first direction, wherein an upper surface of the first isolation region substantially align with an upper surfaces of the fins, and an upper surface of the second isolation region is lower than the upper surface of the fins; and a first insulating layer on the first isolation region.

Method for manufacturing a semiconductor device having a fin located on a substrate

A method for DRC verification of a design layout file comprising off-grid patterns includes identifying an off-grid pattern having one or more off-grid sides, outwardly expanding the one or more off-grid sides to adjacent grids to obtain a first on-grid pattern, inwardly contracting the expanded one or more sides of the first on-grid pattern to adjacent grids to obtain a second on-grid pattern, and performing a DRC verification on the second on-grid pattern using an existing on-grid DRC deck. The method also includes making a backup copy of the design layout file prior to converting the identified off-grid pattern into an on-grid pattern.

Method of design rule check for off-grid irregular layout with on-grid design rule check deck

A method for forming a semiconductor having a plurality of FinFETs. The method includes providing a semiconductor substrate having a surface; and forming a plurality of first fins and a plurality of second fins on the surface of the semiconductor substrate. Further, the method also includes forming a mask layer on top surfaces of the plurality of first fins and the plurality of second fins; and forming an insulation material layer covering side surfaces of the first fins, the second fins and the mask layer. Further, the method includes removing a portion of the mask layer on the first fins; and forming a continuous first gate structure covering side and top surfaces of a plurality of first fins and a discontinuous second gate structure covering only the side surfaces of the second fins and the side surfaces of the mask layer.

Semiconductor structure and fabrication method thereof, and static random access memory cell

A fin-type field effect transistor includes a semiconductor body formed on a substrate, the semiconductor body having a top surface and a pair of laterally opposite sidewalls, and a gate electrode formed above the sidewalls and the top surface of the semiconductor body. The semiconductor body further includes a source region formed on an end portion of the semiconductor body, a drain region formed on another end portion of the semiconductor body, and a channel region formed between the source region and the drain region and surrounded by the gate electrode, wherein a doping concentration of the channel region decreases with increasing distance from the top surface and the sidewalls.

Fin-type field effect transistor and manufacturing method thereof

A method of manufacturing a fin-type field effect transistor includes sequentially forming a first mask and a second mask on a semiconductor substrate; patterning the second mask; forming and patterning a third mask on the second mask in accordance with a fin pattern of the fin-type field effect transistor; etching the semiconductor substrate, the first mask, and the second mask through the third mask, wherein portions of the first and second masks are removed and a first trench is formed in the semiconductor substrate; removing the third mask; etching the first mask through the second mask and removing the second mask; etching the semiconductor substrate through the first mask to form a plurality of fins and a second trench disposed between adjacent fins, wherein etching the semiconductor substrate further deepens the first trench such that a depth of the first trench is greater than a depth of the second trench.

A method is provided for fabricating a CMOS device. The method includes providing a semiconductor substrate having a first active region and a second active region. The method also includes forming a first trench on the first active region using a first barrier layer and a second substitute gate electrode layer to protect a gate region on the second active region, followed by forming a first work function layer and a first metal gate in the first trench. Further, the method includes forming a second trench on the second active region using a second barrier layer to protect the first metal gate structure, followed by forming a second work function layer and a second metal gate in the second trench.

CMOS devices and fabrication method

Growing community of inventors

Shanghai, China

Shaofeng Yu