Polyera Corporation

Flexterra, Inc.

Basf Se Corporation

Raynergy Tek Inc.

Shaofeng Lu

Antonio Facchetti

Yu Xia

Hualong Pan

He Yan

Martin Drees

Zhengguo Zhu

Yan Yao

Zhihua Chen

Yan Zheng

Chun Huang

Damien Boudinet

Wei Zhao

Daniel Batzel

Marcel Kastler

Hakan Usta

Silke Annika Koehler

Florian Doetz

Subramanian Vaidyanathan

Minhuei Wang

Meko McCray

Timothy Chiu

Tobin Jay Marks

Jordan R Quinn

William Christopher Sheets

Mark Seger

Xiang Yu

Darwin Scott Bull

Jingqi Wang

Yan Hu

Yuqing Xia

Tobin J Marks

Shiuan-Iou Lin

Liang-Je Lai

Jing Chen

Joshua Lee Ayers

Karen K Chan

Florian Dötz

Yu Xua

Silke Koehler

An active matrix fluidic droplet driver system comprising a plurality fluidic droplet pixels driver comprising organic thin-film transistors is described. Each fluidic droplet pixel driver includes an organic thin film transistor and a pixel electrode where the gate dielectric layer and the pixel dielectric layer comprise an organic polymer. The active matrix fluidic droplet driver system can be fabricated on plastic substrates at low temperature and operates at no more than 40 V.

Electrowetting on demand system with organic transistors

This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.

Thin-film transistor comprising organic semiconductor materials

Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q-Qand Q-Qare each independently &#x2014;C(H)&#x2550;C(H)&#x2014; or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q-Qand Q-Qis (II).

Organic dielectric materials and devices including them

The present teachings relate to curable linear polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such curable linear polymers. In some embodiments, the device can include a passivation layer prepared from the linear polymers described herein. The present linear polymers can be solution-processed, then cured thermally (particularly, at relatively low temperatures) and/or photochemically into various thin film materials with desirable properties.

Curable polymeric materials and their use for fabricating electronic devices

Disclosed are curable linear polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such curable linear polymers. In some embodiments, the device can include a passivation layer prepared from the linear polymers described herein. The present linear polymers can be solution-processed, then cured thermally (particularly, at relatively low temperatures) and/or photochemically into various thin film materials with desirable properties.

The present polymeric materials can be patterned with relatively low photo-exposure energies and are thermally stable, mechanically robust, resist water penetration, and show good adhesion to metal oxides, metals, metal alloys, as well as organic materials. In addition, these polymeric materials can be solution-processed (e.g., by spin-coating), and can exhibit good chemical (e.g., solvent and etchant) resistance in the cured form.

Photopatternable materials and related electronic devices and methods

The present invention relates to all-polymer blends including an electron-acceptor polymer and an electron-donor polymer, capable of providing improved device performance, for example, as measured by power conversion efficiency, when used in photovoltaic cells.

Polymeric blends and related optoelectronic devices

Disclosed are new semiconductor materials prepared from rylene-(&#x3c0;-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Semiconductor materials prepared from rylene-(&#x3c0;-acceptor)copolymers

Curable polymeric materials and related electronic devices

Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.

Polymeric materials for use in metal-oxide-semiconductor field-effect transistors

Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Conjugated polymers and their use in optoelectronic devices

Growing community of inventors

Skokie, IL, United States of America

Shaofeng Lu