Applied Materials, Inc.

Shaofeng Chen

Jeffrey C Hudgens

Steven Victor Sansoni

Michael C Kuchar

Song-Moon Suh

Yuanhong Guo

Matvey Farber

Sheng Michael Guo

Marek W Radko

Yuji Murayama

Pingping Gou

Nagendra Madiwal

Anurag Bansal

Dmitry Lubomirsky

Son Truong Nguyen

David Palagashvili

Alexander Tam

Tien Fak Tan

Kirby Hane Floyd

Ruben A Diaz

A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.

Organic contamination free surface machining

A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

Chamber apparatus for chemical etching of dielectric materials

A method and apparatus for fabricating a wafer spacing mask and a substrate support chuck. Such apparatus is a stencil containing a plurality of dual counterbored apertures that is positioned atop the substrate support chuck while material is deposited onto the stencil and through the apertures' openings onto the chuck. Upon completion of the deposition process, the stencil is removed from the workpiece support chuck leaving deposits of the material of various widths but the same heights to form the wafer spacing mask.

Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck

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Austin, TX, United States of America

Shaofeng Chen