Macronix International Co., Ltd.

Shao Yu Fang

Po-Hao Tseng

An in memory searching device, including multiple first memory cell strings, a controller, and a sensing circuit, is provided. The first memory cell strings are commonly coupled to a first common bit line. Each of the first memory strings includes multiple first data storage layers. The first data storage layers respectively include multiple first memory cell pairs. The first memory cell pairs are respectively coupled to multiple first word line pairs. The controller selects at least one of the first data storage layers to be at least one selected data storage layer, and provides search data to at least one selected word line pair corresponding to the at least one selected data storage layer. The sensing circuit senses a current on the first common bit line to generate a search result.

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Taipei, Taiwan

Shao Yu Fang