Taiwan Semiconductor Manufacturing Comp. Ltd.

Shao-yu Chou

Yih Wang

Meng-Sheng Chang

Ku-Feng Lin

Jui-Che Tsai

Chansyun David Yang

Perng-Fei Yuh

Keh-Jeng Chang

Yoshitaka Yamauchi

Shao-Ting Wu

Tzu-hsien Yang

Yu-Wei Lin

Philex Ming-yan Fan

The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Memory devices, semiconductor devices, and methods of operations a memory device

Memory devices, semiconductor devices, and methods of operating a memory device

Growing community of inventors

HSINCHU COUNTY, Taiwan

Shao-yu Chou