Taiwan Semiconductor Manufacturing Comp. Ltd.

Shao-Yen Ku

Wen-Chang Tsai

Shang-Yuan Yu

Jui-Chuan Chang

Tsai-Pao Su

Chi-Ming Yang

Chin-Hsiang Lin

Chun-Li Chou

Yu-Yen Hsu

Jui-Ping Chuang

Ming-Jung Chen

Chien-Wen Hsiao

Ming-Hsi Yeh

Tzu-Yang Chung

Hsiao Chien-Wen

Chia-Wen Li

Chen-Hsiang Lu

Fan-Yi Hsu

Yung-Long Chen

Ying-Hsueh Chang Chien

Pei-Hung Chen

Yung-Li Tsai

Chih-Chiang Tseng

Weibo Yu

Chi-Yun Tseng

Chun-Syuan Jhuan

Shao-Fu Hsu

Yuan-Chih Chiang

Hsieh-Ching Wei

Yuan Chih Chiang

Rong-Shyan Pan

Heng-Yi Tzeng

Ming-Te Chen

Hung-Lin Chen

Chyi-Shyuan Chern

Yu-Fu Lin

Yu-Ming Lee

Bo-Wei Chou

Simon Su-Horng Lin

Ming-Tsao Chiang

Chung-Ru Yang

Sheng-Chi Shih

Chi-Fu Yu

Hobin Chen

Shan-Ching Lin

Yih-Song Chiu

Chia-Ming Tai

Fu Yi Chang

Chen Ming-Jung

Wagner Chang

Jyun-Chao Chen

Tai-Liang Lyu

Chao-Hui Kuo

Hong-Jie Xu

Yu-Fen Tzeng

Tzu Yang Chung

Rui-Ping Chuang

A method of processing a substrate in semiconductor fabrication is provided. The method includes supplying a mixture from a storage module to a chamber via an inlet conduit. The method further includes detecting the concentration of a substance in the mixture. The method also includes dispensing the mixture over a substrate disposed in the chamber. In addition, the method includes supplying a supply solution including the substance to the chamber via the inlet conduit and dispensing the supply solution over the substrate when the concentration of the substance in the mixture is less than a desired value. The supply solution is supplied to the inlet conduit at a first position that is at a portion of the inlet conduit extending in the chamber.

Method and system for processing substrate in semiconductor fabrication

Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Photoresist removal

A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.

Apparatus and method of removing photoresist layer

A method of processing a substrate in semiconductor fabrication is provided. The method includes supplying a mixture to a process module. The method further includes detecting the concentration of a substance in the mixture. The method also includes dispensing the mixture over a substrate in the process module. In addition, the method includes supplying a supply solution including the substance to the process module and dispensing the supply solution over the substrate if the concentration of the substance in the mixture is less than a desired value.

Methods for processing substrate in semiconductor fabrication

Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (HSO) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (HSO) from the SPM effluent and to provide the recovered HSOto the SPM cleaning unit via a feedback conduit.

Single wafer cleaning tool with HSOrecycling

The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.

Integrated platform for improved wafer manufacturing quality

A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.

Semiconductor apparatus and method of removing photoresist layer on substrate

A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

Method for forming semiconductor device structure

An apparatus includes a production tool and a pipe connected to the production tool. The pipe includes an inner pipe formed of a metal-free material, an outer pipe encircling the inner pipe, and an inlet connected to a channel between the inner pipe and the outer pipe. The apparatus further includes a chemical supply system connected to the pipe. The chemical supply system is configured to supply a chemical through a channel encircled by the inner pipe to the production tool.

Chemical dispense system with reduced contamination

An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.

Methods for transporting wafers between wafer holders and chambers

The present disclosure provides one embodiment of an etch system. The etch system includes a tank designed to hold an etch solution for etching; a silicon monitor configured to measure silicon concentration of the etch solution; a drain module coupled to the tank and being operable to drain the etch solution; and a supply module being operable to fill in the tank with a fresh etch solution.

System and method for an etch process with silicon concentration control

A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NHOH. The cleaning mixture may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface.

Cleaning composition and method for semiconductor device fabrication

One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.

Wafer cleaning

A movable wafer probe may include: an immersion hood including a top body portion and a bottom foot portion, the top body portion having first inner sidewalls surrounding a top opening, the bottom foot portion having second inner sidewalls surrounding a bottom opening; a transducer disposed above the bottom opening and within the top opening, the transducer spaced apart from the first inner sidewalls of the top body portion by a first spacing, the first spacing forming a fluid exhaust port; and a fluid input port extending through the transducer, a bottom end of the fluid input port opening to the bottom opening.

Apparatus and methods for movable megasonic wafer probe

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Jhubei, Taiwan

Shao-Yen Ku