Taiwan Semiconductor Manufacturing Comp. Ltd.

Shao-Shuo Wu

Su-Yu Yeh

Hung-Chih Wang

Yu-Ting Tsai

Hong-Ming Lo

A system and method for cleaning a preclean process chamber in between wafer processing. The internal pressure of the preclean process chamber is reduced to a first pressure and a first gas that consists of oxygen and an inert or noble gas, is introduced into the chamber. Plasma is generated within the preclean process chamber using the first gas at the first pressure. Internal pressure is then reduced to a second pressure, less than the first, and the first gas is continued into the chamber. Plasma is then generated using the first gas at the second pressure. Thereafter, a second gas, consisting of an oxygen-free inert or noble gas, is introduced into the chamber at the second pressure, following which plasma is generated within the chamber using only the second gas.

Growing community of inventors

Changhua County, Taiwan

Shao-Shuo Wu