Numerical Technologies, Inc.

Synopsys, Inc.

Aprio Technologies, Inc.

Tela Innovations, Inc.

Shao-Po Wu

Yao-Ting Wang

Seonghun Cho

Xin Wang

Hongbo Tang

Meg Hung

Christophe Pierrat

Ilya Henry Grishashvili

Alexandre Arkhipov

Chi-Ming Tsai

Kent Richardson

Michael Sanie

Tsz-Tak Daniel Ho

Mark Pilloff

Yu-Yu Chou

Intermediate resolution-enhancement state layouts are generated based upon an original non-resolution enhanced layout of an integrated circuit and an associated resolution-enhanced layout. The intermediate resolution-enhancement state layout includes fragments corresponding to parts of the original layout and biases associated with the fragments, where the biases indicate distances between the fragments and the resolution-enhanced layout. The fragments are also assigned attributes such as fragment type, fragment location, and biases. The intermediate resolution-enhancement state layouts can be combined to generate the layout for a full chip IC. Two or more intermediate resolution-enhancement state layouts are assembled and are locally reconverged to adjust the resolution enhancement associated with the intermediate resolution-enhancement state layouts and obtain the intermediate resolution-enhancement state layouts for the full IC.

Intermediate layout for resolution enhancement in semiconductor fabrication

Phase shifting allows generating very narrow features in a printed features layer. Thus, forming a fabrication layout for a physical design layout having critical features typically includes providing a layout for shifters. Specifically, pairs of shifters can be placed to define critical features, wherein the pairs of shifters conform to predetermined design rules. After placement, phase information for the shifters associated with the set of critical features can be assigned. Complex designs can lead to phase-shift conflicts among shifters in the fabrication layout. An irresolvable conflict can be passed to the design process earlier than in a conventional processes, thereby saving valuable time in the fabrication process for printed circuits.

Incrementally resolved phase-shift conflicts in layouts for phase-shifted features

Transient edges are used to define shapes in an integrated circuit layout for optical proximity correction. A first variation of the shape includes a first edge, a second edge satisfying an edge transition angle condition in relation to the first edge, and one or more first transition edges connected between the first edge and the second edge. A second variation of the shape includes a third edge, a fourth edge satisfying the same edge transition angle condition in relation to the third edge, and one or more second transition edges connected between the third edge and the fourth edge. Although the first transition edges are different from the second transition edges, both the first and second variations of the shape are identified as having the same shape, thereby allowing flexibility and efficiency in the shape identification process for optical proximity correction.

Flexible shape identification for optical proximity correction in semiconductor fabrication

A method of assigning phases to shifters on a layout is provided. The method includes creating a link between any two shifters within a predetermined distance from each other. In one embodiment, the predetermined distance is larger than a minimum feature size on the layout, and smaller than a combined minimum pitch and regulator width. A weight can be assigned to each created link. Phases can be assigned to the shifters, wherein if a phase-shift conflict exists on the layout, then one or more links can be broken based on their weight.

Resolving phase-shift conflicts in layouts using weighted links between phase shifters

An automated design for manufacturability platform which provides integrated physical verification and manufacturing enhancement operations. The platform uses an efficient data structure capable of handling and manipulating both layout circuit and geometry characteristics, which permits a wide range of operations such as timing analysis, design-rule checking and optical proximity corrections on a single platform. This feature eliminates the need to translate layout representations between various tools without the requirement of using a common database. Moreover, the platform's common user interface enables encapsulated information exchange between the design and the manufacturing teams, permiting early consideration of manufacturing distortion or enhancement impact on circuit performance.

Method and platform for integrated physical verifications and manufacturing enhancements

A method of generating simulation reports regarding an integrated circuit layout is provided. The method can include providing a plurality of control points associated with the integrated circuit layout. A single simulation of the plurality of control points can be performed. Detailed information from the single simulation can be stored in a database. Desired information can then be extracted from the database to generate the simulation reports.

Method for providing flexible and dynamic reporting capability using simulation tools

A method and system produce alternating phase shift masks using multiple phase shift mask resolution levels for multiple feature classes. In one method, a pattern for a photolithographic mask that defines a layer is processed, The pattern defines features in multiple feature classes in the layer. For various feature resolution levels, layout dimensions for phase shift windows pairs are defined. The phase shift windows pairs are laid out with the layout dimensions. Phase shift values are assigned to the phase shift windows.

Alternating phase shift masking for multiple levels of masking resolution

One embodiment of the invention provides a system that automatically resolves conflicts between phase shifters during creation of a phase shifting mask to be used in an optical lithography process for manufacturing an integrated circuit. Upon receiving a specification of a layout on the integrated circuit, the system identifies critical-dimension features within the layout. Next, the system places phase shifters comprised of phase shifting geometries on the phase shifting mask to precisely define the critical-dimension features. In doing so, the system identifies junctions within and/or between the critical-dimension features, and removes phase shifting geometries associated with the junctions to obviate coloring conflicts between phase shifters on the phase shifting mask. In one embodiment of the invention, the junctions include T-junctions and/or L-junctions.

Method and apparatus for resolving coloring conflicts between phase shifters

Techniques for forming a design layout with phase-shifted features, such as an integrated circuit layout, include receiving information about a particular phase-shift conflict in a first physical design layout. The information indicates one or more features logically associated with the particular phase-shift conflict. Then the first physical design layout is adjusted based on that information to produce a second design layout. The adjustments rearrange features in a unit of the design layout to collect free space around a selected feature associated with the phase-shift conflict. With these techniques, a unit needing more space for additional shifters can obtain the needed space during the physical design process making the adjustment. The needed space so obtained allows the fabrication design process to avoid or resolve phase conflicts while forming a fabrication layout, such as a mask, for substantiating the design layout in a printed features layer, such as in an actual integrated circuit.

Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features

One embodiment of the invention provides a method that facilitates selectively varying how much of a layout of an integrated circuit is defined by phase shifters during an optical lithography process used in manufacturing the integrated circuit. During operation, the method receives a specification of the layout of the integrated circuit. The method then assigns features within the layout to zones associated with different phase shifting priorities. Next, the method generates a phase shifter placement by placing phase shifters comprised of phase shifting geometries onto a phase shifting mask to define the features within the layout, wherein the phase shifter placement is subject to coloring constraints. Note that in general there is no restriction on the order of zone placement. During this placement process, if coloring constraints cannot be satisfied, the method resolves conflicts and/or removes features from being phase-shifted based upon phase shifting priorities of the zones.

Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit

One embodiment of the invention provides a system for generating trim to be used in conjunction with phase shifters during an optical lithography process for manufacturing an integrated circuit. The system operates by identifying a feature within the integrated circuit to be created by using a phase shifter to produce a region of destructive light interference on a photoresist layer. Next, the system generates the phase shifter for a first mask, while ensuring that design rules are satisfied in defining dimensions for the phase shifter. After the phase shifter is generated, the system generates trim within a second mask, that is used in conjunction with the first mask, by deriving the trim from the previously-defined dimensions of the phase shifter while ensuring that the design rules are satisfied. Note that the design rules can be satisfied by cutting and/or patching portions of the phase shifter and associated trim.

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Portola Valley, CA, United States of America

Shao-Po Wu