Epistar Corporation

Au Optronics Corporation

Shao-Ping Lu

Chia-Liang Hsu

Shih-I Chen

Wen-Luh Liao

Yu-Ren Peng

Wei-Yu Chen

Chien-Fu Huang

Ching-Pei Lin

Chun-Hsien Chang

Shou-Chin Wei

Hung-Ta Cheng

Yi-Ming Chen

Tzu-Chieh Hsu

Chun-Yu Lin

Chia-Wei Kuo

Chun-Fu Tsai

Hung-Ta Chen

A display panel includes a first substrate, a second substrate, pixel structures, a sensing structure, a display medium layer, a first control structure, a second control structure, and color filter patterns. The sensing structure includes a first photosensor and a second photosensor. The display medium layer disposed between the first substrate and the second substrate includes a first modulation portion overlapping a first sensing active device of the first photosensor and a second modulation portion overlapping a second sensing active device of the second photosensor. The first control structure is disposed between the first substrate and the display medium layer. The second control structure is disposed between the second substrate and the display medium layer. The first sensing active device and the second sensing active device respectively overlap a first color filter pattern and a second color filter pattern among the color filter patterns.

Display panel

A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

Light-emitting element having a reflective structure with high efficiency

A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

Light-emitting device and manufacturing method thereof

An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.

A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.

Light-emitting diode

Growing community of inventors

Hsinchu, Taiwan

Shao-Ping Lu