Taiwan Semiconductor Manufacturing Comp. Ltd.

Shao-Fu Fu

Chii-Horng Li

Li-Li Su

Chien-I Kuo

Yi-Fang Pai

Chia-Ling Chan

Wei Hao Lu

Wei Te Chiang

The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

Semiconductor device source/drain region with arsenic-containing barrier region

Growing community of inventors

Kaohsiung, Taiwan

Shao-Fu Fu