Taiwan Semiconductor Manufacturing Comp. Ltd.

Shao-Chi Wei

Hao-Ming Chang

Cheng-Ming Lin

Sheng-Chang Hsu

Min-An Yang

Yu-Hsin Hsu

Shih-Ming Chang

Minfeng Chen

Li-Chih Lu

Chih-Ming Chen

Yuan-Chih Chu

Chi-Kang Chang

Chien-Hung Lai

Chun-Hung Kung

Hsuan-Wen Wang

Kuo-Chin Lin

Hsao Shih

Wei-Lian Lin

Chian-Hun Lai

Chia-Hsien Chen

Shan-Chan Suc

S C Hsu

A cleaning method applied in semiconductor manufacturing is provided. The method includes: receiving a substrate having a surface; identifying a location of a particle on the surface of the substrate; moving a cleaning apparatus toward the location of the particle; performing a cleaning operation, thereby removing the particle by spraying a cleaning liquid from the cleaning apparatus flowing against gravity and toward the surface of the substrate; detecting the surface of the substrate; and performing a second cleaning operation when a cleaning result of the detection is not acceptable. A semiconductor manufacturing method and a system for cleaning a substrate are also provided.

Cleaning method, semiconductor manufacturing method and a system thereof

A method for cleaning is provided. The method includes: removing a pellicle frame from a top surface of a photomask by debonding an adhesive between the photomask and the pellicle frame, wherein a first portion of the adhesive is remained on the top surface of the photomask, and removing the first portion of the adhesive on the top surface of the photomask, including applying an alkaline solution to the top surface of the photomask, and performing a mechanical impact to the photomask.

Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask

A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The light blocking layer has a first portion, a second portion, and a connection portion. The method includes forming a mask layer over the first portion and the second portion of the light blocking layer. The method includes removing the connection portion. The method includes removing the mask layer. The second portion of the light blocking layer is removed during removing the mask layer, while the first portion remains. The method includes after removing the mask layer and the second portion, removing the third portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a light blocking structure in the first recess.

Method for forming photomask and photolithography method

A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.

A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The method includes forming a mask layer over the light blocking layer. The mask layer covers a first portion of the light blocking layer, and the first portion is over a second portion of the transparent substrate. The method includes removing the light blocking layer, which is not covered by the mask layer. The method includes removing the mask layer. The first portion of the light blocking layer is removed during removing the mask layer. The method includes removing the second portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a first light blocking structure in the first recess.

A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.

Photomask and fabrication method therefor

A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.

Method and system for processing substrate by chemical solution in semiconductor manufacturing fabrication

A method of fabricating a photomask includes providing a mask blank; removing a portion of the resist layer to form a patterned resist layer exposing a portion of the cooling layer; patterning the cooling layer by using the patterned resist layer as an etching mask; patterning the opaque layer; and removing the patterned resist layer and the patterned cooling layer. The mask blank includes a light-transmitting substrate and an opaque layer, a cooling layer, and a resist layer sequentially stacked thereon, wherein the cooling layer has a thermal conductivity ranging between 160 and 5000 and an effective atomic number ranging between 5 and 14.

Mask blank and fabrication method thereof, and method of fabricating photomask

A photo mask assembly including a photo mask, a first adhesive layer adhered with the photo mask, a pellicle frame and a pellicle is provided. The pellicle frame includes a plurality of recesses for accommodating the first adhesive layer. The pellicle frame is adhered with the photo mask through the first adhesive layer accommodated in the plurality of recesses. The pellicle is disposed on the pellicle frame. The pellicle frame is between the pellicle and the first adhesive layer. An optical apparatus including the above-mentioned photo mask assembly is also provided.

Photo mask assembly and optical apparatus including the same

A method is disclosed for repairing an opaque defect on a mask substrate. After examining one or more opaque patterns in a predetermined area of the mask substrate, at least one opaque defect in the opaque patterns is identified based on a difference between its light reflection rate and a reference reflection rate. A residue height of the opaque defect is further determined based on its light transmission rate, and a repair formula such as an etching dosage is devised based on the determined residue height.

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Hsinchu, Taiwan

Shao-Chi Wei