Other

Tsinghua University

Shangjr Gwo

Rong-Ming Ho

Han-Yu Hsueh

Hung-Ying Chen

Ming-Shiuan She

Tien-Sheng Chao

Tom Chen

Hsien-Te Tseng

Ya-Chang Chou

Jer-Liang Andrew Yeh

Nanoporous polymers with gyroid nanochannels can be fabricated from the self-assembly of degradable block copolymer, polystyrene-b-poly(-lactide) (PS-PLLA), followed by the hydrolysis of PLLA blocks. A well-defined nanohybrid material with SiOgyroid nanostructure in a PS matrix can be obtained using the nanoporous PS as a template for the sol-gel reaction. After subsequent UV degradation of the PS matrix, a highly porous inorganic gyroid network remains, yielding a single-component material with an exceptionally low refractive index (as low as 1.1).

Antireflection structures with an exceptional low refractive index and devices containing the same

Nanoporous polymers with gyroid nanochannels can be fabricated from the self-assembly of degradable block copolymer, polystyrene-b-poly(L-lactide) (PS-PLLA), followed by the hydrolysis of PLLA blocks. A well-defined nanohybrid material with SiOgyroid nanostructure in a PS matrix can be obtained using the nanoporous PS as a template for the sol-gel reaction. After subsequent UV degradation of the PS matrix, a highly porous inorganic gyroid network remains, yielding a single-component material with an exceptionally low refractive index (as low as 1.1).

The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.

Field effect transistor based sensor

The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas.

Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns

A substrate for supporting epitaxial growth of light emitting semiconductor devices having a non-crystalline multilayer reflection controlling stack under a thin layer of single crystal silicon is shown. A III-Nitride or other semiconductor stimulated emission device is grown on the thin layer of silicon.

Structures for light emitting devices with integrated multilayer mirrors

The present invention provides a method for growing group-III nitride semiconductor heteroepitaxial structures on a silicon () substrate by using a coincidently matched multiple-layer buffer that can be grown on the Si() substrate. The coincidently matched multiple-layer buffer comprises a single-crystal silicon nitride (SiN) layer that is formed in a controlled manner by introducing reactive nitrogen plasma or ammonia to the Si() substrate at a suitably high temperature. Then, an AlN buffer layer or other group-III nitride buffer layer is grown epitaxially on the single-crystal silicon nitride layer. Thereafter, the GaN epitaxial layer or group-III semiconductor heteroepitaxial structure can be grown on the coincidently matched multiple-layer buffer.

Method for growing group-III nitride semiconductor heterostructure on silicon substrate

The present invention discloses a method of oxidizing a nitride film on a conductive substrate comprising the following steps. First, a conductive substrate is provided, and a nitride film is formed on the main surface of the conductive substrate by performing film deposition process or directly nitridating the surface region of the conductive substrate. Then, a local electrode terminal (such as a conductive probe of a scanning-probe microscope) is provided, and a strong electric field is locally generated between the electrode terminal and the conductive substrate in an oxidizing environment, wherein the strong electric field passes through the nitride film, thereby oxidizing the nitride film region passed by the electric field. The method of oxidizing a nitride film according to the present invention can be applied to define patterns on a nitride film, to record information as memory media, and to form growth templates for the use in chemical selective formation processes.

Growing community of inventors

Hsinchu, Taiwan

Shangjr Gwo