Taiwan Semiconductor Manufacturing Comp. Ltd.

Shang-Yun Huang

Chun-Yu Kuo

Chih-Yin Kuo

Fei-Gwo Tsai

Jui-Ping Chuang

Li-Kong Turn

Chun-Hao Chang

Shang-Yuan Yu

Weibo Yu

Hsueh-Yi Chung

The present disclosure relates to a semiconductor device including a substrate and a pair of spacers on the substrate. Each spacer of the pair of spacers includes an upper portion having a first width and a lower portion under the upper portion and having a second width different from the first width. The semiconductor device further includes a gate structure between the pair of spacers. The gate structure has an upper gate length and a lower gate length that is different from the upper gate length.

Semiconductor device having a gate structure with different lengths between laterally etched spacers

Chemical liquid is injected into a tank. A concentration of a first gas dissolved in the chemical liquid is detected. Based on the detected concentration of the first gas, at least one of the first gas and a second gas is injected into the tank to sustain at least one of the concentration of the first gas and a concentration of the second gas in a range of a target value.

System for storing chemical liquid and method for adjusting gas concentration in chemical liquid

Method for laterally etching gate spacers

Systems and methods are provided for edge bead removal. A laser beam of approximately a wavelength is received. The laser beam is delivered along a predetermined beam path. The laser beam is projected on an edge portion of a wafer for edge bead removal.

Systems and methods for edge bead removal

Growing community of inventors

Hsinchu County, Taiwan

Shang-Yun Huang