United Microelectronics Corp.

Shang-Yi Yang

Bin-Siang Tsai

Fu-Yu Tsai

Wei-Lun Hsu

Wei-Hsin Liu

Pi-Hsuan Lai

A method of fabricating a semiconductor device is provided. A plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder are formed on a substrate. An interlayer dielectric layer is filled between the sacrificial gates. A protective layer is formed on the interlayer dielectric layer. The sacrificial gates and the sacrificial gate dielectric layers are removed to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing. A stacked gate structure is formed in the opening, wherein the protective layer is removed.

Growing community of inventors

Taichung, Taiwan

Shang-Yi Yang