Applied Materials, Inc.

Shang Wong

Nitin K Ingle

Shankar Venkataraman

Zheng Yuan

Kevin Mukai

Cary Ching

A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500&#xb0; C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500&#xb0; C. throughout deposition of the bulk layer.

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Cupertino, CA, United States of America

Shang Wong