Mediatek Corporation

Seriphy Technology Corporation

Shang-Pin Chen

Bo-Wei Hsieh

Chia-Yu Chan

An-Siou Li

Ching-Yeh Hsuan

Chun-Wei Chang

Yan-Bin Luo

Duen-Yi Ho

Ming-Shi Liou

Hao-Ping Hong

Sheng-Ming Chang

Chih-Chien Hung

Hung-Chuan Chen

Wei-Chih Chen

Sheng-Feng Lee

Ding-Shiuan Shen

Tzu-wei Chiu

Che-yen Huang

The present application discloses a semiconductor structure. The semiconductor structure a top die and a bottom die, and the maximum die size is constrained to reticle dimension. Each die includes (1) core: computation circuits, (2) phy: analog circuit connecting to memory, (3) I/O: analog circuit connecting output elements, (4) SERDES: serial high speed analog circuit, (5) intra-stack connection circuit, and (6) cache memory. This semiconductor structure can be chapleted design for high wafer yield with least tape out masks for cost saving. The intra-stack connection circuit connects the top die and the bottom die in the shortest distance (about tens of micrometers), so as to provide high signal quality and power efficiency.

Semiconductor structure and semiconductor device

A training method for a memory system is provided. The memory system includes a memory controller and a memory. The memory controller is connected with the memory. The training method includes the following steps. Firstly, the memory samples n command/address signals according to a first signal edge and a second signal edge of a clock signal to acquire a first sampled content and a second sampled content. The memory selectively outputting one of the first sampled content and the second sampled content through m data signals to the memory controller in response to a control signal. Moreover, m is larger than n and smaller than 2n.

DRAM, memory controller and associated training method

A semiconductor device includes a substrate, a die and multiple conductive traces. The die is mounted on the substrate. The conductive traces are routed on the substrate and connected to the die. The conductive traces at least include a plurality of first conductive traces and a plurality of second conductive traces. The second conductive traces are coupled to a predetermined voltage for providing a shielding pattern. The first conductive traces and the second conductive traces are disposed on the substrate in a substantially interlaced pattern.

Semiconductor devices and methods for enhancing signal integrity of an interface provided by a semiconductor device

A memory system includes a memory controller, a first memory device and a second memory device. The memory controller issues a first clock signal and a second clock signal. The memory controller transmits or receives a data signal. The first memory device receives the first clock signal and the second clock signal. The second memory device receives the first dock signal and the second clock signal. If a first mode register of the first memory device is in a first single-ended mode and a second mode register of the second memory device is in a second single-ended mode, the first memory device transmits or receives the data signal according to the first dock signal, and the second memory device transmits or receives the data signal according to the second clock signal.

Memory device, memory controller and associated memory system operated according to selected clock signals

A memory module includes a memory interface circuit and a training signal generator. The memory interface circuit includes a plurality of terminals for communicating with a memory controller, and the terminals comprise at least a plurality of data terminals. The training signal generator is coupled to the memory interface circuit, and is arranged for generating a training signal to the memory controller through only a portion of the data terminals or a specific terminal instead of the data terminals when the memory module receives a training request from the memory controller.

Memory module, memory controller and associated control method for read training technique

A memory interface circuit includes a plurality of receivers and a signal detector. The plurality of receivers are arranged for receiving at least a clock signal and a plurality of command signals from a memory controller, respectively. The signal detector is arranged for detecting whether the memory interface circuit receives the clock signal or not to generate a detection result to enable or disable the plurality of receivers.

Memory interface circuit having signal detector for detecting clock signal

A memory controller is connected with a memory. The memory controller includes a clock signal pin and plural command pins. The clock signal pin is connected with the memory for transmitting a clock signal to the memory. The plural command pins are connected with the memory for transmitting a command signal to the memory. The command signal contains an entering self-refresh command and an entering power down command. The memory enters a self-refresh state when the entering self-refresh command is executed. The memory enters a power down state when the entering power down command is executed.

Memory capable of entering/exiting power down state during self-refresh period and associated memory controller and memory system

A memory module, comprising: a first pin, arranged to receive a first signal; a second pin, arranged to receive a second signal; a first conducting path, having a first end coupled to the first pin; at least one memory chip, coupled to the first conducting path for receiving the first signal; a predetermined resistor, having a first terminal coupled to a second end of the first conducting path; and a second conducting path, having a first end coupled to second pin for conducting the second to a second terminal of the predetermined resistor; wherein the first signal and the second are synchronous and configured to be a differential signal, for enabling a selected memory chip from the at least one memory chip to be accessed.

Memory controller, memory module and memory system

An integrated circuit is provided. The integrated circuit includes a control circuitry, a plurality of pins coupled to a plurality of conductive traces of a printed circuit board (PCB), and a plurality of driving units coupled to the pins. The control circuitry provides a plurality of control signals according to data to be transmitted. The driving units are divided into a plurality of first driving units and second driving units. According to the control signals, the first driving units provide the data to a memory device of the PCB via the corresponding pins and the corresponding conductive traces of PCB, and the second driving units provide a constant voltage to the corresponding conductive traces of PCB via the corresponding pins. The conductive traces corresponding to the second driving units are separated by the conductive traces corresponding to the first driving units on the PCB.

Integrated circuit, electronic device and method for transmitting data in electronic device

A memory interface circuit includes a first variable impedance circuit coupled between a first supply voltage and a pad, and a second variable impedance circuit coupled between a second supply voltage and the pad; wherein when the first supply voltage changes, at least one of the first variable impedance circuit and the second variable impedance circuit is controlled to have different setting in response to the changing of the first supply voltage.

Memory interface circuit capable of controlling driving ability and associated control method

A jitter control circuit within a chip comprises an adaptive PDN, a current generator and a jitter generator. The adaptive PDN is capable of being controlled/modulated to provide difference impedances. The current generator is coupled to the adaptive PDN, and is arranged for receiving a supply voltage provided by the adaptive PDN and generating currents with different patterns. The jitter generator is coupled to the adaptive PDN, and is arranged for generating a plurality of jitters corresponding to the currents with different patterns, respectively, according to the supply voltage provided by the adaptive PDN.

Jitter control circuit within chip and associated jitter control method

A method for performing signal control of an electronic device and an associated apparatus are provided, where the method includes the steps of: when it is detected that a phase difference between a data signal and a clock signal reaches a predetermined value, controlling the clock signal to switch from a first frequency to a second frequency, wherein both of the clock signal and the data signal are signals of the electronic device (e.g. signals of a memory interface circuit of the electronic device); applying at least one phase shift to the data signal until a condition is satisfied; and controlling the clock signal to switch from the second frequency to the first frequency; wherein the data signal is calibrated with respect to the clock signal with aid of the at least one phase shift.

Method for performing signal control of an electronic device, and associated apparatus

An apparatus for performing signal driving in an electronic device may include a decoupling capacitor and at least one switching unit (e.g. one or more switching units). The decoupling capacitor may have a first terminal and a second terminal, and may be positioned in an output stage within the electronic device and coupled between a first predetermined voltage level and another predetermined voltage level, where the apparatus may perform signal driving with aid of the output stage. In addition, the aforementioned at least one switching unit may be coupled between one terminal of the first and the second terminals of the decoupling capacitor and at least one of the first predetermined voltage level and the other predetermined voltage level, and may be arranged for selectively disabling the decoupling capacitor.

Apparatus for performing signal driving in an electronic device with aid of different types of decoupling capacitors for pre-driver and post-driver

A method for performing memory interface calibration in an electronic device, an associated apparatus, and an associated memory controller are provided, where the method includes: controlling a signal on a digital terminal of the memory controller to switch between a plurality of levels, wherein the digital terminal is coupled to a memory of the electronic device; and based on at least one detection result obtained from detecting the signal, calibrating a logical state of the signal to correspond to a level of the plurality of levels. More particularly, the memory controller may include a plurality of command terminals, a plurality of data terminals, and at least one clock terminal, which are used for coupling the memory controller to the memory. For example, the digital terminal may be a command terminal or a data terminal.

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Hsinchu County, Taiwan

Shang-Pin Chen