United Microelectronics Corp.

Shang-Nan Chou

En-Chiuan Liou

Chia-Hsun Tseng

Yu-Ting Hung

Che-Yi Lin

Shin-Feng Su

A method of fabricating a semiconductor structure for improving critical dimension control is provided in the present invention. The method includes the following steps. An inter metal dielectric (IMD) layer is formed on a semiconductor substrate, a patterned hard mask layer is formed on the IMD layer, and a first aperture is formed in the IMD layer. A first barrier layer is formed on the patterned hard mask layer and a surface of the first aperture, a first patterned resist is formed on the first barrier layer, and an etching process is performed to form a second aperture in the IMD layer by using the first patterned resist as a mask. The first patterned resist is kept from being poisoned because of the first barrier layer, and the critical dimension control of the semiconductor structure may be improved accordingly.

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Tainan, Taiwan

Shang-Nan Chou