Skhynix Inc.

Shang-Koon Na

Mi-Ri Lee

Kyong-Bong Rouh

Su-Ho Kim

Yong-Seok Eun

Tae-Han Kim

Hun-Sung Lee

A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same

A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.

CMOS circuit and method for fabricating the same

Growing community of inventors

Gyeonggi-do, South Korea

Shang-Koon Na