Motorola Corporation

Shang-Hui Larry Tu

Gordon Tam

Guang X Li

Pak M Tam

Zuoying Lisa Zhang

A semiconductor sensing device (10) for sensing a lateral acceleration includes a field effect transistor (132) fabricated along a sidewall (114) of a trench (112) formed in a substrate (11). A movable gate (12) overlies a channel region (138) of the field effect transistor (132). In response to a lateral acceleration perpendicular to the sidewall (114) of the trench (112), the movable gate (12) moves relative to the substrate (11) in a direction substantially perpendicular to the sidewall (114). The conductive state of the channel region (138) depends on the distance between the movable gate (12) and the channel region (138) and changes in response to the lateral acceleration Thus, the motion of the movable gate (12) modulates a current flowing in the field effect transistor (132). The lateral acceleration is sensed by sensing the current flowing in the field effect transistor (132).

Semiconductor sensing device and method for fabricating the same

A method of fabricating a fast-switching, low-R(on) insulated-gate bipolar transistor including providing an N-type semiconductor wafer with a planar surface, forming a thin heavily-doped layer, having a concentration in the range of 3.times.10.sup.17 /cm.sup.3 to 1.times.10.sup.19 /cm.sup.3, in the wafer adjacent the planar surface, providing a P-type semiconductor wafer, and bonding a surface of the P-type wafer to the planar surface of the N-type wafer. An emitter and a gate are then formed in the N-type wafer in the usual manner and a collector is formed on the P-type wafer.

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Phoenix, AZ, United States of America

Shang-Hui Larry Tu