Taiwan Semiconductor Manufacturing Comp. Ltd.

Shang-Hsuan Chiu

Chih-Liang Chen

Chi-Yu Lu

Chih-Yu Lai

Hui-Zhong Zhuang

Kuang-Ching Chang

Yueh Chiang

Chia-Tien Wu

Yi-Hsun Chiu

Jerry Chang Jui Kao

Guang-Cheng Wang

Ming-Xiang Liu

Ming-Xiang Lu

Metallization structure for an integrated circuit. In one embodiment, an integrated circuit includes a metal-to-diffusion (MD) layer disposed over an active region of a cell, gates disposed over the active region of the cell, and a first metallization layer including M0 tracks disposed over the MD layer and the gates. The integrated circuit further includes a second metallization layer including M1 tracks disposed over the first metallization layer. The M1 tracks include first M1 tracks each having a first predetermined distance from an edge of the cell and second M1 tracks each having a second predetermined distance from the edge of the cell, wherein the first M1 tracks are longer than the second M1 tracks.

Semiconductor metal layer structure over cell region

An integrated circuit (IC) structure includes two active areas extending in a first direction, two gate structures extending in a second direction, a first metal segment extending in the second direction in a first metal layer, second and third metal segments extending in the first direction in a second metal layer, and a gate via structure extending from the third metal segment to one of the gate structures. The gate structures overlie the active areas, the first metal segment overlies each of the active areas between the gate structures, the second metal segment overlies a first active area and overlies and is electrically connected to the first metal segment, and the first and second metal segments are electrically connected to the second active area, isolated from the first active area between the gate structures, and connected to the first active area outside the gate structures.

First metal structure, layout, and method

An integrated circuit includes a first conductor segment intersecting a first active-region structure at a source/drain region and a second conductor segment intersecting a second active-region structure at a source/drain region. The first conductor segment and the second conductor segment are separated at proximal edges by a separation distance. A distance from a first horizontal cell boundary to a proximal edge of the first conductor segment is larger than a distance from a second horizontal cell boundary to a proximal edge of the second conductor segment by a predetermined distance that is a fraction of the separation distance.

Arrangement of source or drain conductors of transistor

A flip-flop includes a first input circuit, a first NOR logic gate, a stacked gate circuit, a first NAND logic gate and an output circuit. The first input circuit generates a first signal responsive to at least a first data signal, a first or a second clock signal. The first NOR logic gate is coupled between a first and a second node, and generates a second signal responsive to the first signal and a first reset signal. The stacked gate circuit is coupled between the first and a third node, and generates a third signal responsive to the first signal. The first NAND logic gate is coupled between the third and a fourth node, and generates a fourth signal responsive to the third signal and a second reset signal. The output circuit is coupled to the fourth node, and generates a first output signal responsive to the fourth signal.

Integrated circuit and method of forming the same

A flip-flop includes a first set of transistors of a first type being located in a first row and a second set of transistors of a second type being located in a second row. The second type being different from the first type. The first and second set of transistors include a first master latch circuit and a second master latch circuit. The first and second master latch circuit are separated from each other in the first direction by a first distance. A first output signal of the first and second master latch circuit is a first input signal of the first master latch circuit and the second master latch circuit. A second output signal of the first and second master latch circuit is a second input signal of the first and second master latch circuit.

An integrated circuit (IC) structure includes first and second active areas extending in a first direction in a semiconductor substrate, first and second gate structures extending in a second direction perpendicular to the first direction, wherein each of the first and second gate structures overlies each of the first and second active areas, a first metal-like defined (MD) segment extending in the second direction between the first and second gate structures and overlying each of the first and second active areas, and an isolation structure positioned between the first MD segment and the first active area. The first MD segment is electrically connected to the second active area and electrically isolated from a portion of the first active area between the first and second gate structures.

Source/drain isolation structure, layout, and method

Systems, methods and devices are provided, which can include an engineering change order (ECO) base. A base layout cell includes metal layer regions, conductive gate patterns arranged above metal layer regions; oxide definition (OD) patterns, metal-zero layer over oxide-definition (metal-zero) patterns, at least one cut metal layer (CMD) pattern; and at least one via region. The base layout cell can be implemented in at least two non-identical functional cells. A first functional cell of the at least two non-identical functional cells includes first interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a first layout, and a second functional cell of the at least two non-identical functional cells includes second interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a second layout.

Base layout cell

An integrated circuit includes a first conductor segment intersecting a first active-region structure at a source/drain region and a second conductor segment intersecting a second active-region structure at a source/drain region. The first conductor segment and the second conductor segment are separated at proximal edges by a separation distance. The first conductor has a distal edge separated from a first power rail, and the second conductor segment is connected to a second power rail through a via-connector. A distance from the first power rail to a proximal edge of the first conductor segment is larger than a distance from the second power rail to a proximal edge of the second conductor segment by a predetermined distance that is a fraction of the separation distance.

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Hsinchu, Taiwan

Shang-Hsuan Chiu