Globalwafers Co., Ltd.

Shang-Chi Wang

Chia-Chi Tsai

Han-Zong Wu

I-Ching Li

Miao-Pei Chen

Wen-Ching Hsu

Cheng-Jui Yang

Chia-Jung Lee

Chia-Yeh Lee

Chia-Lin Li

Chi Yuan Hsu

Cheng-Wei Gu

Bo-Ting Lin

A method for identifying a wafer is provided, which includes the following steps. A marked frame is obtained from a wafer inspection picture. A gray scale index corresponding to the marked frame is calculated based on a gray scale value corresponding to each of multiple pixels included in the marked frame. The gray scale index indicates a proportion of pixels whose gray scale values are greater than a specified value. Whether a trace pattern in the marked frame is a scratch or a grain boundary is determined based on the gray scale index.

Method for identifying wafer

A method for calculating an object pick-and-place sequence and an electronic apparatus for automatic storage pick-and-place are provided. When a warehousing operation is to be performed, the following steps are performed. A weight of an object to be stocked that is to be put on a shelf is obtained. The weight is substituted into a plurality of coordinate positions corresponding to a plurality of unused grid positions respectively, so as to calculate a plurality of estimated center of gravity positions. Whether the estimated center of gravity positions are located within a balance standard area is determined so as to sieve out a plurality of candidate grid positions from these unused grid positions. One of the candidate grid positions is selected as a recommended position of the object to be stocked.

Method for calculating object pick-and-place sequence and electronic apparatus for automatic storage pick-and-place

An automated optical inspection method, an automated optical inspection system, and a storage medium are provided. The method includes the following. An original image including first images of a target object is captured by an optical lens. An edge detection is performed on the original image to obtain an edge image including second images having an edge pattern. At least one of maximum, minimum, and average values of a pixel value in the second images is calculated. The edge image is divided into image blocks according to a unit area, and characteristic values are calculated according to the at least one of the maximum, minimum, and average values corresponding to the second images included in the image blocks. An optimal regression model is obtained by training a regression model corresponding to a defect of the target object according to the characteristic values and a data of the target object.

Automated optical inspection method, automated optical inspection system and storage medium

A wafer surface defect inspection method and a wafer surface defect inspection apparatus are provided. The method includes the following steps. Scanning information of a wafer is received, and the scanning information includes multiple scanning parameters. At least one reference point of the scanning information is determined, and path information is generated according to the at least one reference point and a reference value. Multiple first scanning parameters corresponding to the path information in the scanning parameters are obtained according to the path information to generate a curve chart. According to the curve chart, it is determined whether the wafer has a defect, and a defect type of the defect is determined.

Wafer surface defect inspection method and apparatus thereof

A wafer processing system and a rework method thereof are provided. An image capture device captures an image of a wafer to generate a captured image. A control device detects a defect pattern in the captured image, calculates a target removal thickness according to distribution of contrast values of the defect pattern, and controls a processing device to perform processing on the wafer according to the target removal thickness.

Wafer processing system and rework method thereof

A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.

Material analysis method

The disclosure provides a wafer inspection method and wafer inspection apparatus. The method includes: receive scanning information of at least one wafer, wherein the scanning information includes a plurality of haze values; the scanning information is divided into a plurality of information blocks according to the unit block, and the feature value of each of the plurality of information blocks is calculated according to the plurality of haze values included in each of the plurality of information blocks; and converting the feature value into a color value according to the haze upper threshold and the haze lower threshold, generating the color value corresponding to the at least one wafer according to the converted color value according to the feature value, whereby the color graph displays the texture content of the at least one wafer.

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Hsinchu, Taiwan

Shang-Chi Wang