Analog Devices International Unlimited Company

Analog Devices Global

Analog Devices Global Unlimited Company

Other

Shane Patrick Geary

Bernard Patrick Stenson

Stephen O'Brien

Baoxing Chen

Edward John Coyne

Laurence Brendan O'Sullivan

Catriona Marie O'Sullivan

Patrick Martin McGuinness

Paul Martin Lambkin

Patrick J Murphy

Alan Brannick

Shane Tooher

William Allan Lane

Donal McAuliffe

Michael Noel Morrissey

Sombel Diaham

Breandán Pol Og Ó hAnnaidh

Christina B McLoughlin

Christophe Antoine

Michael C W Coln

Michael C Coln

Jan Kubik

Alfonso Berduque

Raymond J Speer

Colm Patrick Heffernan

Mark Forde

Helen Berney

Michael John Flynn

Ramji Lakshmanan

Roman Trogan

Matthew Thomas Canty

John P Meskell

Daniel Joseph Lucey

Himanshu Jain

Sarah Carroll

Conor John Mcloughlin

Rizwan Gill

Sinead Maire McDermott

Mark De Leon Alea

Breandán Pol Og ÓhAnnaidh

A microfabricated thermal platform can be formed over a substrate, such as a silicon wafer, that may form part of the platform. The substrate is coated in a thermally-insulating material, which may be an organic polymer such, as polyimide or SUS. The surface of the thermally-insulating material may include an arrangement of one or more thermal sites, with each site having a reaction plate (or thermal plate) over which chemical reactions may occur. A heating element may be positioned beneath each reaction plate. A fluidic medium, such as a liquid or a gas, may be disposed over the thermal sites. One application is in chemical and biological reactions. In such reactions, the fluidic medium may be an aqueous solution which comprises reagents for those reactions. The fluidic medium may be an ionically conducting fluid, organic solution or a gas. Precise temperature control enables the correct reactions.

Thermal platform and a method of fabricating a thermal platform

A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

Insulation jacket for top coil of an isolated transformer

The disclosed technology relates generally to semiconductor devices, and more particularly to semiconductor devices including a metal-oxide-semiconductor (MOS) transistor and are configured for accelerating and monitoring degradation of the gate dielectric of the MOS transistor. In one aspect, a semiconductor device configured with gate dielectric monitoring capability comprises a metal-oxide-semiconductor (MOS) transistor including a source, a drain, a gate, and a backgate region formed in a semiconductor substrate. The semiconductor device additionally comprises a bipolar junction transistor (BJT) including a collector, a base, and an emitter formed in the semiconductor substrate, wherein the backgate region of the MOS transistor serves as the base of the BJT and is independently accessible for activating the BJT. The MOS transistor and the BJT are configured to be concurrently activated by biasing the backgate region independently from the source of the MOS transistor, such that the base of the BJT injects carriers of a first charge type into the backgate region of the MOS transistor, where the first charge type is opposite charge type to channel current carriers.

Semiconductor device configured for gate dielectric monitoring

Embodiments of the disclosure provide various nanogap sensor designs (e.g., horizontal nanogap sensors, vertical nanogap sensors, arrays of multiple nanogap sensors, various arrangements for making electrical connections to the electrodes of nanogap sensors, etc.), as well as various methods which may be used to fabricate at least some of the proposed sensors. The nanogap sensors proposed herein may operate as molecular sensors to help identify chemical species through electrical measurements using at least a pair of electrodes separated by a nanogap.

Designs and fabrication of nanogap sensors

Electrochemical sensors can include at least two electrodes, over which an electrolyte is formed. The electrodes can be isolated from one another in order for reduction/oxidation reactions to occur at the electrodes and for an electric current to flow therebetween. The present disclosure describes the use of a barrier in the electrochemical sensor that is configured to isolate electrodes from one another for the purpose of preventing electrode shorting. Additionally, the physical structure of the barrier can also act as a stencil for shaping the electrodes.

Electrochemical sensor and method of forming thereof

A bipolar junction transistor is provided with an emitter structure that is positioned above the upper surface of the base region. The thickness of the emitter and the interfacial oxide thickness between the emitter and the base is configured to optimize a gain for a given type of transistor. A method of fabricating PNP and NPN transistors on the same substrate using a complementary bipolar fabrication process is provided. The method enables the emitter structure for the NPN transistor to be defined separately to that of the PNP transistor. This is achieved by epitaxially growing the emitter layer for the PNP transistor and growing the emitter layer for the NPN transistor in a thermal furnace.

Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor

A bipolar junction transistor is provided with a multilayer collector structure. The layers of the collector are individually grown in separate epitaxial growth stages. For a PNP transistor, each layer, after it is grown, is doped with a p-type dopant in a dedicated implant stage. By providing separate epitaxial growth stages and separate dopant implant stages for each layer of the collector, the dopant concentration profile in the collector region can be better controlled to optimize the speed and breakdown voltage of a bipolar junction transistor.

Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor

A charge control structure is provided for a bipolar junction transistor to control the charge distribution in the depletion region extending into the bulk collector region when the collector-base junction is reverse-biased. The charge control structure comprises a lateral field plate above the upper surface of the collector and dielectrically isolated from the upper surface of the collector and a vertical field plate which is at a side of the collector and is dielectrically isolated from the side of the collector. The charge in the depletion region extending into the collector is coupled to the base as well as the field-plates in the charge-control structure, instead of only being coupled to the base of the bipolar junction transistor. In this way, a bipolar junction transistor is provided where the dependence of collector current on the collector-base voltage, also known as Early effect, can be reduced.

Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor

Isolators having a back-to-back configuration for providing electrical isolation between two circuits are described, in which multiple isolators formed on a single, monolithic substrate are connected in series to achieve a higher amount of electrical isolation for a single substrate than for isolators formed on separate substrates connected in series. Discrete dielectric regions positioned between isolator components forming an isolator provide electrical isolation between the isolator components as well as between the isolators formed on the substrate. The back-to-back isolator may provide one or more communication channels for transfer of information and/or power between different circuits.

Back-to-back isolation circuit

An isolator device and a corresponding method of forming the isolator device to include first and second electrodes, a layer of first dielectric material between the first and second electrodes, and at least one region of second dielectric material between the layer of first dielectric material and at least one of the first and second electrodes. The second dielectric material has a higher relative permittivity than the first dielectric material.

Isolator and method of forming an isolator

A magnetic core is provided for an integrated circuit, the magnetic core comprising: a plurality of layers of magnetically functional material; a plurality of layers of a first insulating material; and at least one layer of an secondary insulating material; wherein layers of the first insulating material are interposed between layers of the magnetically functional material to form subsections of the magnetic core, and the at least one layer of second insulating material is interposed between adjacent subsections.

Magnetic core for use in an integrated circuit, an integrated circuit including such a magnetic core, a transformer and an inductor fabricated as part of an integrated circuit

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Sixmilebridge, Ireland

Shane Patrick Geary