Flexenable Limited

Flexenable Technology Limited

Flexenble Limited

Shane Norval

Jan Jongman

Henning Sirringhaus

Carl Martin Hayton

Aleksandra Rankov

Brian Asplin

Jeremy Hills

Burag Yaglioglu

Charlotte Harrison

Patrick Too

Joffrey Dury

Ian Horne

Timothy Von Werne

A device comprising a stack of layers defining one or more electronic elements, wherein the stack comprises at least: one or more semiconductor channels; a dielectric; a first conductor pattern defining one or more coupling conductors, wherein the one or more coupling conductors are capacitively coupled to the one or one or more semiconductor channels via the dielectric; a planarisation layer; a second conductor pattern defining one or more routing conductors, wherein the second conductor pattern is in contact with the first conductor pattern via through holes in at least the planarisation layer, and wherein the semiconductor channel regions are at least partly outside the through hole regions.

Semiconductor devices

A technique comprising: forming an insulator over a first conductor pattern; patterning the insulator to form an insulator pattern which exposes the first conductor pattern in one or more via regions; forming a second conductor pattern over the insulator pattern, which second conductor pattern contacts said first conductor pattern in said one or more via regions; creating a more even topographic profile in said one or more via regions, with the second conductor pattern exposed outside the one or more via regions; forming a semiconductor () over the second conductor pattern for charge carrier transfer between the second conductor pattern and the semiconductor; and depositing a third conductor () over the semiconductor, for charge carrier transfer between the third conductor () and the semiconductor ().

Photodetector device including a photoactive semiconductor over a conductor pattern and method of making the same

A method, comprising: forming a patterned layer of matrix material and/or one or more patterned layers of colour filter material in situ over a support film; forming in situ over said support film a stack of layers defining electrical circuitry via which each of an array of pixel electrodes is independently addressable; wherein forming said stack of layers comprises forming in situ over said patterned layer of matrix material and/or one or more patterned layers of colour filter material at least: a patterned conductor layer defining an array of source conductors and an array of drain conductors; a layer of semiconductor channel material defining semiconductor channels between the source and drain conductors; and another patterned conductor layer defining an array of gate conductors providing gate electrodes in said channel regions.

Control component for optoelectronic device

There is provided a method of patterning a stack of layers defining one or more electronic device elements, comprising: creating a first thickness profile in an uppermost portion of the stack of layers by laser ablation; and etching the stack of layers to translate the first thickness profile into a second thickness profile at a lower level; wherein the etching reduces the thickness of said uppermost portion of the stack and one or more lower layers of the stack under said uppermost portion.

Patterning layers stacks for electronic devices

A method of producing an electronic device including the steps of: (i) providing a body including a first, conductive element separated from a first surface of said body by a portion of said body; (ii) removing a selected portion of said body to define a recess in said body extending from said first surface and via which a portion of said first element is exposed; and (iii) putting into said recess a liquid medium carrying a first material; wherein said first material is preferentially deposited on the exposed inner surface of said body defining said recess, and wherein the deposited first material is used to provide a connection between said first element and a second conductive element located within said body or later deposited over said first surface of said body.

Electronic devices

A pixel driver circuit having only three conductive layers is described. The pixel driver circuit comprises a vertical driver transistor () spanning said three conductive layers, wherein a first of said conductive layers () on a first side of a middle conductive layer () provides a first source-drain connection () of said driver transistor, wherein a third of said conductive layers () on the opposite side of said middle conductive layer to said first conductive layer provides a gate connection () for said vertical driver transistor, and wherein said middle conductive layer provides a second source-drain connection () for said vertical driver transistor. The circuit also comprises a lateral switching transistor () with source-drain connections () in one of said three conductive layers. A dielectric layer () is provided between said first and second conductive layers and between said second and third conductive layers, and wherein semiconductor material () is provided spanning said first and second source-drain connections of said vertical driver transistor. A pixel display element () is coupled to said first source-drain connection of said vertical driver transistor.

Growing community of inventors

Cambridge, United Kingdom

Shane Norval