Beijing Boe Display Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Tsinghua University

Beijing Boe Technology Development Co., Ltd.

Shan Zhang

Lianjie Qu

Yonglian Qi

Hebin Zhao

Guangdong Shi

Yun Qiu

Xiaoling Xu

Jia Qi Li

Chao Liu

Shuai Liu

Hong Yang

Ruizhi Yang

Xiao-Ping Zheng

Hua Geng

Xiao-Jiao Deng

Ning Jia

Shiyu Xu

Zhi-Jie Li

A method for manufacturing a side wire for a substrate and a substrate structure are provided. The method includes: forming a plurality of first pattern structures on a side surface of the substrate, wherein a gap between any adjacent two of the plurality of first pattern structures connects a top surface and a bottom surface of the substrate to each other; forming a conductive material film covering the side surface of the substrate; and removing the plurality of first pattern structures and a portion of the conductive material film that is attached on the plurality of first pattern structures, and maintaining a portion of the conductive material film that is located between any adjacent two of the plurality of first pattern structures as the side wire.

Method for manufacturing side wire for substrate and substrate structure

A substrate includes a driving backplane, a plurality of first connecting lines and a plurality of second connecting lines. The driving backplane includes a base substrate, at least one first lead group and at least one second lead group. Each first lead group includes a plurality of first leads, and each second lead group includes a plurality of second leads. A first lead group and a corresponding second lead group is disposed in a peripheral region. The plurality of first connecting lines are disposed on at least one side face of the driving backplane, each first connecting line is electrically connected to at least one first lead. The plurality of second connecting lines are disposed on the at least one side face of the driving backplane, each second connecting line is electrically connected to at least one second lead, and is in contact with a corresponding first connecting line.

Substrate having dual edge connection line and method for manufacturing the same, display panel, and display apparatus

A method of manufacturing thin film transistor(s) includes: providing a monocrystalline silicon wafer, the monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other; forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness; providing a substrate, and transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer; and patterning the monocrystalline silicon film transferred to the substrate to form active layer(s) of the thin film transistor(s).

Methods of manufacturing thin film transistor, biometric device, and display apparatus

A method of forming an array substrate, the array substrate and a display device are provided. The method of forming the array substrate includes: in a case that a display unit is formed on one of two opposite surfaces of a base substrate and a driving circuit is formed on the other of the two opposite surfaces of the base substrate, performing a roughening treatment on edge regions of the two opposite surfaces of the base substrate and a side surface of the base substrate connecting the edge regions of the two opposite surfaces, to form a roughened region; and forming, at the roughened region, a metal wiring connecting a signal input terminal of the display unit and a signal output terminal of the driving circuit.

Method of forming array substrate, array substrate and display device

A gas detecting apparatus and a gas detecting method based on terahertz spectroscopy are provided. The apparatus includes a sample chamber allowing a terahertz wave to pass therethrough; a gas feeding unit connected to the sample chamber to feed gas into the sample chamber; a gas outputting unit connected to the sample chamber to output gas from the sample chamber; and a vacuum pump connected to the sample chamber to evacuate the sample chamber. The apparatus further comprises one or more of a pressure gauge disposed on the sample chamber, an anemometer disposed on the sample chamber, a humidity regulation device connected to the sample chamber, and a temperature regulation device connected to the sample chamber.

Gas detecting apparatus and method based on terahertz spectroscopy

The present disclosure provides a circuit substrate, a method for manufacturing the same, a display substrate and a tiled display device. The circuit substrate includes: a base substrate; a driving circuit on the base substrate; and conductive connection portions. A plurality of grooves is defined in a lateral side of the base substrate; each of the plurality of grooves extends through a top surface and an opposite bottom surface of the base substrate. The driving circuit includes signal lines on the top surface of the base substrate and signal-line leads on the bottom surface of the base substrate. The plurality of conductive connection portions are corresponding to the plurality of grooves in a one-to-one manner; at least one part of the conductive connection portion is in the corresponding groove. The conductive connection portion is connected with the corresponding signal line and the corresponding signal-line lead, respectively.

Circuit substrate, method for manufacturing the same, display substrate and tiled display device

Growing community of inventors

Beijing, China

Shan Zhang