Synopsys, Inc.

Shan Yuan

Mayukh Bhattacharya

Michal Jerzy Rewienski

Chih Ping Antony Fan

Michael Durr

He Dong

Jonti Talukdar

Huiping Huang

Michael Z Chui

A method of determining defect sensitization includes parsing a netlist of a circuit design to determine a plurality of potential defects and partitioning the circuit design into a plurality of blocks. The method also includes generating a graph representing the circuit design and determining a transitive closure of the graph. The method further includes grouping the plurality of potential defects to produce a plurality of groups of potential defects and selecting a potential defect from each group of the plurality of groups to form a simulation group of potential defects. The method also includes simulating the circuit design by injecting, into the circuit design, every potential defect of the simulation group to produce a set of outputs of the plurality of blocks and determining a defect sensitization for the simulation group of potential defects based on the set of outputs of the plurality of blocks.

Measuring device defect sensitization in transistor-level circuits

This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Finding equivalent classes of hard defects in stacked MOSFET arrays

In accordance with an exemplary simulation technique, an improved selective application of Newton-Raphson iterations can improve accuracy while ensuring good performance. In this method, selectively applying Newton-Raphson iteration in a simulation of a unit of the integrated circuit design can include determining second order effects to define a linearity value. Newton-Raphson iteration is performed when the linearity value is less than a linearity threshold and convergence of the simulation is not achieved.

Electronic circuit simulation method with adaptive iteration

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San Jose, CA, United States of America

Shan Yuan