United Microelectronics Corp.

Shan Ye

Tsuo-Wen Lu

Shih-Cheng Chen

Tsai-Yu Wen

Yu-Ren Wang

Po-Jen Chuang

Tzu-Hsiang Su

A method of forming a high dielectric constant (high-k) dielectric layer by atomic layer deposition includes the following steps. Cycles are performed one after another, and each of the cycles sequentially includes performing a first oxygen precursor pulse to supply an oxygen precursor to a substrate disposed in a reactor; performing a first oxygen precursor purge after the first oxygen precursor pulse; performing a chemical precursor pulse to supply a chemical precursor to the substrate after the first oxygen precursor purge; and performing a chemical precursor purge after the chemical precursor pulse. The first oxygen precursor pulse, the first oxygen precursor purge, the chemical precursor pulse, and the chemical precursor purge are repeated by at least 3 cycles. A second oxygen precursor pulse is performed to supply an oxygen precursor to the substrate after the cycles. A second oxygen precursor purge is performed after the second oxygen precursor pulse.

Method of forming high dielectric constant dielectric layer by atomic layer deposition

A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.

Semiconductor device

A method for forming a HfOx film based on atomic layer deposition (ALD) process includes: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles includes applying HfClpulse and applying HO pulse over the substrate and a content ratio of HfClto HO is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film.

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Kaohsiung, Taiwan

Shan Ye