Signify Holding B.v.

Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Philips Lighting Holding B.v.

Shan Shan Wang

Jie Fu

Gang Wang

Yu Wang

Zhi Quan Chen

Liang Shi

Hu Wang

Zhiquan Chen

Feng Qiu

Wei Hu Zhang

Marco Haverlag

Shu Xu

Peter Alexander Duine

Chun Yang

Xianhui Zhang

Herman Johannes Gertrudis Gielen

Xingpeng Yang

Junhu Liu

Huaizhou Liao

Kelvin Wang

Lei Sui

Zhen Yi Zheng

Thijmen Galekop

Feng Ju

John Dai

Yufei Zhou

Qun Lou

Kai Qi Tian

A driver circuit is for driving a GaN power commutation switch of a switch mode power converter. A sensing component is connected to the GaN switch for sensing a parameter such as a peak current of the power commutation. An energy storage component provides a certain turn on voltage between the gate and source of the GaN switch. The charging and discharging of the energy storage component is regulated, and the sensing is disabled with timing which is synchronized with the charging and discharging function of the energy storage component. It is prevented that a voltage across the sensing component reduces the generated gate-source drive voltage of the GaN switch.

Driver circuit for a GaN switch mode power converter

A boost converter has a main energy storage inductor and a main GaN boost switch with a node between them. A pre-charging switch is connected at the output side of the main boost switch and the inductor, between the node and an output capacitor. The pre-charging switch comprises a body diode in the forward direction from the output capacitor to the node. The output capacitor is charged by the pre-charging switch in a pre-charge phase and this provides a soft start-up to avoid large inrush currents. A third switch, which is also a GaN switch, is in series with the pre-charging switch to provide synchronous output rectification. The third switch has a body diode in a forward direction from the node to the output capacitor. In the pre-charge phase, both the boost switch and third switch are turned off whereas in a subsequent boost phase, the pre-charging switch is turned constantly on, and alternately the boost switch and the third switch are turned on and off to implement the boost conversion.

Boost converter and method of controlling a boost converter

A LED driving arrangement has a main converter stage and a power commutation stage in parallel with an LED unit. An energy divert mode of operation is used during which a set current is provided to the LED unit, and the main converter stage is used to deliver a current larger than the set current. The power commutation stage is used to divert energy from the LED unit and return the diverted energy to an input to the main converter. The remaining set current is delivered to the LED unit. This enables deeper dimming than the dimming level applied to the main converter stage, but without requiring an additional switch mode power converter.

LED driving arrangement and driving method

A driving circuit comprises a switch mode power converter circuit to convert a supply voltage (e.g. rectified mains), including an energy storage component and a main control switch. The energy storage component discharges to provide a regulated DC current to an output load upon the switching of the main control switch. A time-varying offset is used to modulate the regulated current hereby controlling the voltage across the energy storage component. In this way, the voltage across the energy storage component is maintained above the supply voltage with a safety margin, and this is used to prevent input current spikes and hence prevent an efficiency reduction of the driver circuit.

Driving circuit, and LED circuit and a driving method

A semiconductor device includes a substrate; a gate structure, located over the substrate, the gate structure including a first gate oxide layer, a second gate oxide layer, and a silicon layer. The first gate oxide layer is over the substrate, and the first gate oxide layer has a sloped sidewall on one side and a vertical sidewall on another side. The second gate oxide layer is over the substrate and on the sloped sidewall of the first gate oxide layer, and a thickness of the second gate oxide layer is less than a thickness of the first gate oxide layer. The silicon layer is formed over the first gate oxide layer and the second gate oxide layer.

Semiconductor device

A LED lighting circuit has a plurality of LED segments connected in series. A switching arrangement is used to selectively bypass at least one LED segment to implement a tapped linear driver approach. Degrading of a component in the LED lighting circuit is detected, so that a first TLD current modulation scheme is implemented when no such degrading is detected whereas a second current modulation scheme, different from the first current modulation scheme, is implemented to compensate for said degrading. Said degrading is leading to an increase in a turning on voltage of one LED segment, and compared to said first current modulation scheme, said second current modulation scheme has a higher voltage threshold at which said LED segment is switched. In this way, protection may be provided for circuit components and the light output may be maintained at the desired level in the event of component degrading, such as LED chip failure or contact resistance changes.

Tapped linear driver and driving method

A method for forming a semiconductor device includes providing a substrate, forming an oxide layer over the substrate, forming a plurality of first gate oxide layers by etching the oxide layer, forming a second gate oxide layer between adjacent first gate oxide layers, forming a silicon layer over the plurality of first gate oxide layers and the second gate oxide layer, and etching the plurality of first gate oxide layers, the silicon layer, and the second gate oxide layer to expose the substrate, thereby forming a plurality of gate structures. The first gate oxide layer of the plurality of first gate oxide layers has sloped sidewalls. A thickness of the second gate oxide layer is less than a thickness of the first gate oxide layer. Each gate structure includes an etched first oxide layer, a portion of the second gate oxide layer, and a portion of the silicon layer.

Semiconductor device and method for forming the same

Disclosed is a luminaire () comprising: a heatsink () comprising a rim () 5 having a first rim section (), a second rim section () and an intermediate rim section () in between the first rim section and the second rim section; a first heatsink region comprising a mounting region () and a plurality of first fins () extending from the mounting region to at least one of the first rim section and the second rim section; and a second heatsink region comprising a plurality of second fins () looping from the 10 intermediate rim section; a light module () mounted in the mounting region () and thermally coupled to the first heatsink region, the light module comprising at least one light engine () and a controller () for the at least one light engine; and a sensor () mounted on the second heatsink region, the sensor being communicatively coupled to the controller, the controller being adapted to control the at least one light engine in 15 response to a sensor signal from the sensor.

Heatsink and luminaire

A lighting circuit uses a tapped linear driver architecture in which there are at least two LED types; a first LED type with a first forward voltage, and a second LED type with a second forward voltage at least double the first forward voltage. The first segment of the tapped linear driver comprises more LEDs of the first type than the second type and the last segment comprises more LEDs of the second type than the first type. This arrangement enables a reduction in the number of LEDs needed, but without significantly impacting on the efficiency of the circuit.

LED arrangement and LED driving method

A power supply system uses a DC-DC power converter () for supplying an output load. A compensation circuit () is connected between the input to the DC-DC converter and the output of the DC-DC converter and it provides a compensating path in response to a voltage drop at the output of the DC-DC converter caused by a surge in the output load. The power supply system further comprises a low drop out regulator () as the output load, which low drop out regulator () having an input connected to the DC-DC power converter and the compensation circuit, and an output connected to an output terminal (C) for connection to a further output load. This enables the DC-DC power converter to have a low current capability, because a large current demand can be met by the DC supply to the DC-DC converter.

Power supply system and method and circuit using the same

A lighting controller and method has light sources which are activated for a respective lighting duration in a repeating non-overlapping sequence. The end of the lighting duration for one light source is detected for triggering the switching on of the next light source in the sequence. This provides non-overlapping control of the light sources and provides an efficient and easy to implement the required controller.

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Shanghai, China

Shan Shan Wang