Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shan Li

Juncheng Xiao

Wei Wu

Bin Zhao

Jun Hong Zhao

Jun Zhao

Leilei Feng

The present application provides an array substrate, a manufacturing method thereof, and a display panel thereof. A first ink is coated on an active region of an underlay substrate to form an active layer pattern, a second ink is coated on a channel region on the underlay substrate to form a protective layer pattern. Then the active layer pattern and the protective layer pattern is cured to form films, and to simultaneously form an active layer and a protective layer. The protective layer can protect the channel region of the active layer to mitigate an issue of the conventional corroded and contaminated metal oxide.

Array substrate, manufacturing method thereof, and display panel thereof

The present disclosure provides an array substrate, a method for manufacturing the array substrate, and a display device. The array substrate includes a substrate, a gate electrode, and an oxide semiconductor layer. Material of the oxide semiconductor layer includes a modified metal element. Proportion of the modified metal element in all metal elements gradually decreases from the gate electrode to the oxide semiconductor layer, which can solve technical problems of poor stability and low mobility of a metal oxide thin film transistor.

Array substrate, method for manufacturing array substrate, and display device

The present disclosure provides a method for manufacturing a thin film transistor array substrate and a display panel. The method includes: forming a plurality of dispersed metal oxide grains on a substrate; forming an amorphous metal oxide semiconductor layer in contact with the plurality of metal oxide grains, and at least one metal element in the metal oxide grain is same as metal elements in the metal oxide semiconductor layer; performing an annealing process on the amorphous metal oxide semiconductor layer, to obtain a crystallized metal oxide semiconductor layer.

Method for manufacturing thin film transistor array substrate and display panel

An array substrate and a display panel are provided. The array substrate includes a substrate, a gate, a gate insulating layer, an oxide semiconductor layer, and a source-drain metal layer. Material of at least a portion of the gate insulating layer in contact with the oxide semiconductor layer and material of the oxide semiconductor layer include an oxide of the first metal element. Thus, a transition interface between the gate insulating layer and the oxide semiconductor layer has a lower density of defect states, which is beneficial to improve mobility and stability.

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Guangzhou, China

Shan Li