Industrial Technology Research Institute

Shan-Haw Chiou

Tzu-Chi Chou

Kuo-Chuang Chiu

Wen-Hsuan Chao

Chiung-Hui Huang

Li-Duan Tsai

Tien-Heng Huang

Keng-Yang Chen

Chien-Ming Lai

Chun-Mu Chen

Chia-Chan Hsu

Ping-Hsing Yang

Yi-Wen Kao

Yu-Tsz Shie

Show-Ju Peng

Yu-Tzu Hsieh

Ren-Fong Cai

Mu-Tung Chang

Hsin-Ming Cheng

An electrocatalyst is provided. The electrocatalyst includes Pd-containing metal nitride, wherein the metal is Co, Fe, Y, Lu, Sc, Ti, V, Cu, Ni, or a combination thereof. The molar ratio between the metal and Pd is greater than 0 and less than or equal to 0.8. A fuel cell utilizing the above electrocatalyst is further provided.

Electrocatalyst and fuel cell employing the same

A p-type metal oxide semiconductor material is provided, which is composed of AlGeO, wherein 0&#x3c;x&#x2266;0.6, and 1.0&#x2266;y&#x2266;2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.

P-type metal oxide semiconductor material and transistor

A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of

P-type metal oxide semiconductor material and method for fabricating the same

The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula:InGaMZnO,wherein M is Ca, Mg, or Cu, 0&#x3c;x+y&#x2266;0.1, 0&#x2266;m&#x2266;3, and 0&#x3c;x, 0&#x2266;y, or 0&#x2266;x, 0&#x3c;y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1&#xd7;10&#x2dc;6&#xd7;10cm.

P-type metal oxide semiconductor

The invention provides a thermoelectric material, a method for fabricating the same, and a thermoelectric module employing the same. The thermoelectric material is composed of ZnSbRe, wherein 0&#x3c;x&#x3c;0.02. Further, the thermoelectric module includes a first electrode, and a thermoelectric element, wherein the thermoelectric element includes the thermoelectric material composed of ZnSbReand contacts to the first electrode; and a second electrode contacting to the thermoelectric element, wherein the first and second electrodes are separated by the thermoelectric element.

Thermoelectric material, method for fabricating the same, and thermoelectric module employing the same

A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LiZnO.

P-type metal oxide semiconductor material and fabrication method thereof

Growing community of inventors

Baoshan Shiang, Taiwan

Shan-Haw Chiou