Macom Technology Solutions Holdings, Inc.

Shamit Som

Wayne Mack Struble

John Stephen Atherton

Jason Matthew Barrett

Nishant R Yamujala

Kohei Fujii

Walter H Nagy

An example field effect transistor includes a substrate, a first source metal over the substrate, a second source metal over the substrate, and a drain metal positioned between the first source metal and the second source metal over a channel of the field effect transistor. The drain metal includes a drain metal body having a notched region between the first source metal and the second source metal over the channel, and the notched region defines a first projecting portion and a second projecting portion of the drain metal body. In one aspect, the first projecting portion and the second projecting portion are positioned on respective sides of the notched region. The notched region is a triangular-shaped notched region in one example.

Layout techniques and optimization for power transistors

Various aspects of integrated amplifiers, layouts for the integrated amplifiers, and packaged arrangements of the amplifiers are described. In one example, an amplifier includes an amplifier cell, and a biasing network coupled to the common gate transistor in the amplifier cell. The amplifier cell includes a common source transistor and a common gate transistor in a cascode arrangement, where at least one of the common source transistor and the common gate transistor comprises a field plate. Among other advantages, the amplifiers described herein can be biased with relatively high voltages and still operate like a single a common source transistor, without sacrificing reliability, performance, or requiring additional off-chip components, such as biasing networks of resistors and inductors.

High voltage stacked transistor amplifier

Various embodiments are disclosed for improved and structurally optimized transistors, such as RF power amplifier transistors. A transistor may include a drain metal portion raised from a surface of a substrate, a drain metal having a notched region, a gate manifold body with angled gate tabs extending from the gate manifold, and/or a source-connected shielding. The transistor may include a high-electron-mobility transistor (HEMT), a gallium nitride (GaN)-on-silicon transistor, a GaN-on-silicon-carbide transistor, or other type of transistor.

Examples of integrated semiconductor devices are described. In one example, an integrated device includes first and second transistors formed on a substrate, where the transistors share a terminal metal feature to reduce a size of the integrated device. The terminal metal feature can include a shared source electrode metalization, for example, although other electrode metalizations can be shared. In other aspects, a first width of a gate of the first transistor can be greater than a second width of a gate of the second transistor, and the shared metalization can taper from the first width to the second width. The integrated device can also include a metal ground plane on a backside of the substrate, and the terminal metal feature can also include an in-source via for the shared source electrode metalization. The in-source via can electrically couple the shared source electrode metalization to the metal ground plane.

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Chelmsford, NH, United States of America

Shamit Som