Thales

Ecole Polytechnique

Shailendra Bansropun

Afshin Ziaei

Matthieu Le Baillif

Paolo Martins

Brigitte Loiseaux

Mane-Si Laure Lee-Bouhours

Jacques Peretti

Georges Lampel

Daniel Paget

Alistair Rowe

Bruno Gerard

Michel Garcia

Matthieu Le Bailiff

According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.

Capacitive RF MEMS intended for high-power applications

A passive radiofrequency microelectronic components for an integrated circuit which includes a dielectric substrate and at least one metal conductive layer positioned on said substrate. The conductive layer including at least one first metal conductive portion and a second metal conductive portion separated by an insulation. A microelectronic component according to the invention includes at least one graphene layer positioned so that a radiofrequency or hyperfrequency signal crosses said at least one graphene layer when it is transmitted between said first metal conductive portion and said second metal conductive portion, said graphene layer being able, when it is subject to an electric potential, to transmit said radiofrequency or hyperfrequency signal along a first direction and to attenuate said radiofrequency or hyperfrequency signal along a second direction opposite to said first direction.

Passive microelectronic components, capable of allowing a radio-frequency or hyper-frequency signal to travel in a single direction

The present invention relates to a process for fabricating light-emitting device. More particularly, the aim of the invention is to allow the fabricating of light emitters with improved efficiency by using artificial materials, enabling antireflection or high-reflectivity treatments to be carried out. For this purpose, subwavelength structures are etched on one of the ends of an emissive cavity, enabling external face to be controlled. The invention applies to any light emitter, and therefore notably to lasers and more particularly still to QCLs (quantum cascade lasers). Moreover, the fabrication process according to the invention is preferably a wafer-scale process.

Optimized process for fabricating light-emitting devices using artificial materials

The invention is directed to a spin-polarized electron injector using a semiconductor tip, in which tip the injected electrons are photocreated by a circularly polarized light excitation incident on the rear of the tip. This tip is supported by a transparent lever or cantilever and undergoes a surface treatment for the purpose of removing the surface oxide layer, to prevent said layer from reforming and to improve the proportion of injected electrons.

Local injector of spin-polarized electrons with semiconductor tip under light excitation

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Paris, France

Shailendra Bansropun