International Business Machines Corporation

Shahzad Akbar

Jack Oon Chu

Brian Cunningham

John M Aitken

Perwaiz Nihal

Somnuk Ratanaphanyarat

Billy L Crowder

Gregory Fitzgibbon

Asif Iqbal

A method of fabricating a micro-coaxial wiring structure comprises forming a first insulation layer and patterning a trench therein. A first conductive layer is formed on the first insulation layer and having a shape conforming to the insulation layer and lining the trench. A second insulation layer is formed on the first conductive layer within the trench and having a shape conforming to the first conductive layer lining the trench. A conductive signal line having a predetermined aspect ratio for providing a desired value of resistance per unit length is formed on the second insulation layer within the trench. A third insulation layer is then formed. Lastly, a conductive shielding line is formed upon the third insulation layer, the conductive shielding line being aligned with the conductive signal line.

Method of Fabricating a micro-coaxial wiring structure

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to 300.degree.-600.degree. C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

Nonselective germanium deposition by UHV/CVD

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-9 Torr; heating the substrate to 300-375 degrees C; and providing a 10% GeH4, 90% He mixture of gas with a GeH.sub.4 partial pressure of 1-5 mTorr.

Heteroepitaxial growth of germanium on silicon by UHV/CVD

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Poughkeepsie, NY, United States of America

Shahzad Akbar