Nanosys, Inc.

Qualitau, Inc.

Shahriar Mostarshed

Linda T Romano

Yaoling Pan

Robert S Dubrow

Chunming Niu

Jian Chen

Xiangfeng Duan

Francisco A Leon

Jay L Goldman

Michael L Anderson

Dave Stumbo

David P Stumbo

Vijendra Sahi

Virginia Robbins

Edward McCloud

Alice Fischer-Colbrie

Michael A Casolo

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Methods for oriented growth of nanowires on patterned substrates

Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.

Method of fabricating gate configurations for an improved contacts in nanowire based electronic devices

Gating configurations and improved contacts in nanowire-based electronic devices

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Systems and methods for nanowire growth and harvesting

A parametric test system is for testing devices in dice in a semiconductor wafer, each die having a plurality of pads for electrically connecting to the device in the die. A tester of the system has a plurality of input/output lines for providing and receiving electrical signals during a device test. Multiplexer circuitry of the test system includes a plurality of networks of automated switches. The multiplexer circuitry is configured to receive electrical signals on the input lines from the tester and to provide the electrical signals to a wafer prober, wherein the multiplexer circuitry is configured to restrict how the electrical signals can be provided to the networks of automated switches. As a result of the multiplexer being configured to restrict how the electrical signals can be provided to the networks of automated switches, the configuration of the networks of automated switches can be simplified.

Automatic multiplexing system for automated wafer testing

The present invention provides processes for producing horizontal nanowires that are separate and oriented and allow for processing directly on a substrate material. The nanowires grow horizontally by suppressing vertical growth from a nucleating particle, such as a metal film. The present invention also provides for horizontal nanowire growth from nucleating particles on the edges of nanometer-sized steps. Following processing, the nanowires can be removed from the substrate and transferred to other substrates. The present invention also provides for nanowires produced by these processes and electronic devices comprising these nanowires. The present invention also provides for nanowire growth apparatus that provide horizontal nanowires, and processes for producing nanowire devices.

Nanowire horizontal growth and substrate removal

A semi-automatic multiplexing system for automated semiconductor wafer testing employs a jumper block for each device type in the semiconductor wafer to be tested, each jumper block having inputs for receiving a test input/output line, a plurality of block contacts corresponding to pads of a device to be tested, and manually set connectors or jumper cables for selectively interconnecting jumper block inputs to block contacts. A multiplexer is then used for selectively connecting tester input/output lines to the jumper blocks, thereby reducing the number of relays required for connecting test signals to the devices in the semiconductor wafer.

Semi-automatic multiplexing system for automated semiconductor wafer testing

Gate configuration for nanowire electronic devices

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

A probe card is vertically mounted generally perpendicular to a wafer undergoing life tests in a heated environment to limit exposure of the probe card to heat from the wafer chuck. The probe card and probe head assembly are mounted on a support rail which has one or more channels for the flow of cool air to a probe head assembly and the probe card, while it shields the flex cable from the hot chuck. The cool air flow disrupts convective hot air flow upwards from the heated chuck to the probe card and probe head and facilitates cooling of the probe card and probe head.

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San Mateo, CA, United States of America

Shahriar Mostarshed