Commissariat a L'energie Atomique Et Aux Energies Alternatives

Sébastien Becker

Salim Boutami

Frank Fournel

François Templier

Abdelkader Aliane

Jean-Jacques Yon

Mathieu Dupoy

Jean-Guillaume Coutard

Geoffroy Dumont

Denis Pelenc

Cédric Allier

Anthony Lefebvre

Hélène Bourvon

A method of manufacturing an optoelectronic device, including the steps of: a) forming a photonic device including a plurality of photonic components on a first substrate; b) forming an electronic device including a semiconductor layer coating a second substrate; c) after steps a) and b), bonding the electronic device to the photonic device by direct bonding, and then removing the second substrate; d) after step c), forming, on the upper surface side of the electronic device, electric connection metallizations, the method further including: —after step a) and before step c), a step of deposition of a metal layer continuously extending over the entire upper surface of the device.

Optoelectronic device manufacturing method

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

A process for manufacturing a detection device having at least one thermal detector covered by a mineral sacrificial layer, at least one getter portion covered by a carbon-based sacrificial layer, and a thin encapsulation layer surrounding the thermal detector and the getter portion includes a making a through-opening extending through the mineral sacrificial layer and opening on the substrate. The carbon-based sacrificial layer is deposited so as to cover the getter portion located in the through-opening and to entirely fill the through-opening.

Process for manufacturing a device for detecting electromagnetic radiation, comprising a getter material

The invention relates to a method for fabricating a thermal detector (), comprising the following steps:

Method for fabricating a detection device comprising a step of direct bonding of a thin sealing layer provided with a getter material

The invention relates to a method for fabricating a detection device, comprising the following steps:

Method for fabricating a detection device comprising a step of transferring and direct bonding of a thin layer provided with a getter material

A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.

Growing community of inventors

Grenoble, France

Sébastien Becker