Samsung Sdi Co., Inc.

Seungyong Chae

Jaehyun Kim

Ran Namgung

Hwansung Cheon

Kyung Soo Moon

Yoong Hee Na

Kyungsoo Moon

Changsoo Woo

Jimin Kim

Seung Yong Han

Eunmi Kang

Seung Ryong Han

Taeho Kim

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition

Semiconductor photoresist composition and method of forming patterns using the composition

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —ORor —OC(═O)R.

A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

Semiconductor resist composition, and method of forming patterns using the composition

A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn&#x2014;O&#x2014;Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.

Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask. 

Semiconductor photoresist composition, and method of forming patterns using the composition

A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent:  wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: 

A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent: wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio. 

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Seungyong Chae