Samsung Electronics Co., Ltd.

Seungweon Ha

Won-Gil Han

Junghyun Roh

Jae Heung Lee

Yong Je Lee

Sangho An

Jaeyoung Hong

Wangsun Lim

A semiconductor device includes a substrate that includes a cell array region, a peripheral region, and a scribe lane region. A stack structure is disposed on the cell array region of the substrate and includes electrodes that are vertically stacked and spaced apart from each other. A dummy structure extends from the peripheral region to the scribe lane region of the substrate and includes first dielectric layers and second dielectric layers that are alternately and repeatedly stacked. A vertical channel structure penetrates the stack structure, and a slit in the dummy structure on the scribe lane region. The slit extends in a direction that is perpendicular to a top surface of the substrate and penetrates at least a portion of the dummy structure. The slit includes a void.

Semiconductor device and electronic system including the same

A bonding wire includes a wire core including a silver-palladium alloy. A coating layer is disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

Bonding wire having a silver alloy core, wire bonding method using the bonding wire, and electrical connection part of semiconductor device using the bonding wire

Growing community of inventors

Cheonan-si, South Korea

Seungweon Ha